Title:
BORIDE THIN FILMS ON SILICON
Document Type and Number:
WIPO Patent Application WO2005010953
Kind Code:
A3
Abstract:
Boride thin films of conducting and superconducting materials are formed on silicon by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, on silicon substrates by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the silicon substrates.
Inventors:
LIU ZI-KUI (US)
LIU ZHI-JIE (US)
XI XIAOXING (US)
LIU ZHI-JIE (US)
XI XIAOXING (US)
Application Number:
PCT/US2004/005289
Publication Date:
July 07, 2005
Filing Date:
February 24, 2004
Export Citation:
Assignee:
PENN STATE RES FOUND (US)
LIU ZI-KUI (US)
LIU ZHI-JIE (US)
XI XIAOXING (US)
LIU ZI-KUI (US)
LIU ZHI-JIE (US)
XI XIAOXING (US)
International Classes:
C23C14/00; C23C14/06; H01L39/24; (IPC1-7): B05D5/12; B32B5/00; C22C23/00; H01L39/24
Foreign References:
| US6797341B2 | 2004-09-28 |
Other References:
ZENG ET AL: "In situ epitaxial MgB2 thin films for superconducting electronics", NATURE MATERIALS, vol. 1, 2 September 2002 (2002-09-02), pages 1 - 4, XP008047317
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