Title:
BORON NITRIDE THIN FILM EMITTER AND PRODUCTION METHOD THEREFOR, AND ELECTRON EMISSION METHOD USING BORON NITRIDE THIN FILM EMITTER
Document Type and Number:
WIPO Patent Application WO/2006/068287
Kind Code:
A1
Abstract:
In designing a boron nitride thin film being excellent in field electron emission performance and containing boron nitride crystal having a sharp-tip-end shape, and an emitter formed by the thin film, the distribution condition of the crystal is properly controlled to thereby provide an emitter low in field electron emission threshold and excellent in efficiency. In designing a boron nitride thin film emitter comprising crystal shown by a general formula BN, containing sp3 binding, sp2 binding boron nitrides or a mixture of them, and having a shape sharpened at the tip end and excellent in field electron emission performance, when an emitter is deposited by a reaction from vapor phase, the angle of a substrate with a reaction gas flow is controlled to thereby control the distribution condition of the crystal on the surface of the thin film.
Inventors:
Komatsu, Shojiro c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Moriyoshi, Yusuke c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Okada, Katsuyuki c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Moriyoshi, Yusuke c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Okada, Katsuyuki c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Application Number:
PCT/JP2005/023995
Publication Date:
June 29, 2006
Filing Date:
December 21, 2005
Export Citation:
Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-shi Ibaraki, 47, 30500, JP)
Komatsu, Shojiro c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Moriyoshi, Yusuke c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Okada, Katsuyuki c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Komatsu, Shojiro c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Moriyoshi, Yusuke c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
Okada, Katsuyuki c/o NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 30500, JP)
International Classes:
H01J1/304; H01J9/02; H01J1/30; H01J9/02
Attorney, Agent or Firm:
Matsumoto, Satoru (TOKYO-CHIZAI PATENT OFFICE, Kita-yaesu Bldg. 3rd Floor 2-11, Nihonbashi
3-Chome, Chuo-K, Tokyo 27, 10300, JP)
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