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Title:
BORON-SILICON CO-DOPED DIAMOND ELECTRODE, PREPARATION METHOD THEREFOR AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/118510
Kind Code:
A1
Abstract:
A boron-silicon co-doped diamond electrode, a preparation method therefor and use thereof. The boron-silicon co-doped diamond electrode comprises a substrate and a boron-silicon co-doped diamond layer provided on the substrate. The boron-silicon co-doped diamond electrode can effectively improve the conductivity of a diamond layer by doping boron element into the diamond layer, and can effectively improve the catalytic activity of the diamond layer by doping silicon element. Therefore, boron-silicon co-doping significantly increases the conductivity and catalytic activity of the diamond electrode, and in turn improves the production of ammonia gas through electrocatalytic nitrogen reduction. A preparation method for a boron-silicon co-doped diamond electrode can prepare a boron-silicon co-doped diamond electrode having excellent catalytic performance by means of simple processes, thereby simplifying preparation steps and reducing costs. Also disclosed are application examples where the boron-silicon co-doped diamond electrode is applied to electrocatalytic nitrogen reduction.

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Inventors:
TANG YONGBING (CN)
HU YUAN (CN)
YANG YANG (CN)
XU MENGQI (CN)
ZHANG WENJUN (CN)
Application Number:
PCT/CN2018/120236
Publication Date:
June 18, 2020
Filing Date:
December 11, 2018
Export Citation:
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Assignee:
SHENZHEN INST ADV TECH (CN)
International Classes:
C25B11/06; C23C16/30; C23C16/455; C25B1/00
Domestic Patent References:
WO2018101347A12018-06-07
Foreign References:
CN102586762A2012-07-18
CN108315711A2018-07-24
CN105688971A2016-06-22
CN103757600A2014-04-30
US20070031694A12007-02-08
Other References:
WEI, JUNJUN, ET AL: "boron doped diamond thin film research", JOURNAL OF SYNTHETIC CRYSTALS, vol. 36, no. 03, 30 June 2007 (2007-06-30), ISSN: 1000-985x
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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