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Title:
BRAZING FILLER METAL, BRAZING FILLER METAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2013/002407
Kind Code:
A1
Abstract:
Provided are: a brazing filler metal in which the amount of added indium is reduced while the bonding strength achieved in the prior art between a ceramic substrate and a metal sheet is maintained; and a brazing filler metal paste that uses the brazing filler metal. A powder mixture is obtained by mixing an alloy powder comprising Ag, In, and Cu; Ag powder; and an active metal hydride powder. The powder mixture includes 0.5-5.0 mass% of an active metal hydride powder of which the particles have a mean equivalent spherical diameter of 10-25 μm. The mean equivalent spherical diameters of the alloy powder particles, the Ag powder particles, and the active metal hydride powder particles satisfy the relationship: alloy powder ≥ active metal hydride powder > Ag powder, and have the following particle size distribution: 10% cumulative particle diameter (d10) of 3-10 μm, 50% cumulative particle diameter (d50) of 10-25 μm, and 90% cumulative particle diameter (d90) of 30-50 μm. As for frequency distribution, a peak exists between the 50% cumulative particle diameter (d50) and the 90% cumulative particle diameter (d90).

Inventors:
IMAMURA HISAYUKI (JP)
FUJITA SUGURU (JP)
WATANABE JUNICHI (JP)
Application Number:
PCT/JP2012/066859
Publication Date:
January 03, 2013
Filing Date:
July 02, 2012
Export Citation:
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Assignee:
HITACHI METALS LTD (JP)
IMAMURA HISAYUKI (JP)
FUJITA SUGURU (JP)
WATANABE JUNICHI (JP)
International Classes:
C04B37/02; B23K35/22; B23K35/30; C22C5/06; H01L23/12; H05K3/38
Foreign References:
JP2009170930A2009-07-30
JP2003335585A2003-11-25
JP2002292490A2002-10-08
JPH04285076A1992-10-09
JP2004314161A2004-11-11
Other References:
See also references of EP 2727898A4
Attorney, Agent or Firm:
HORI, Shiroyuki et al. (JP)
Ditch Shiroyuki (JP)
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Claims: