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Title:
BULK ACOUSTIC WAVE RESONATOR HAVING ACOUSTIC RESISTANCE LAYER, AND ASSEMBLY THEREOF AND MANUFACTURING METHOD THEREFOR, FILTER, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/062912
Kind Code:
A1
Abstract:
The present disclosure relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode. The overlapping region of the top electrode, the piezoelectric layer, and the bottom electrode in the thickness direction of the resonator constitutes an effective region of the resonator; the piezoelectric layer comprises a first layer and a second layer; an acoustic resistance layer is provided between the first layer and the second layer; the second layer is located above the first layer; the inner edge of the acoustic resistance layer is located at the inner side of the boundary of the acoustic mirror in a horizontal direction; the acoustic resistance of the acoustic resistance layer is different from the acoustic resistance of the piezoelectric layer; and the resonator further comprises a channel or an opening for communicating the acoustic resistance layer with the outside. The present disclosure further relates to a bulk acoustic wave resonator assembly, a method for manufacturing a bulk acoustic wave resonator, a filter, and an electronic device.

Inventors:
PANG WEI (CN)
BAN SHENGGUANG (CN)
XU YANG (CN)
YANG QINGRUI (CN)
ZHANG MENGLUN (CN)
Application Number:
PCT/CN2021/117485
Publication Date:
March 31, 2022
Filing Date:
September 09, 2021
Export Citation:
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Assignee:
ROFS MICROSYSTEM TIANJIN CO LTD (CN)
International Classes:
H03H3/02; H03H9/02; H03H9/17
Foreign References:
US20170207768A12017-07-20
US20180219528A12018-08-02
US20190007029A12019-01-03
US20190115901A12019-04-18
US20180175275A12018-06-21
US20170257076A12017-09-07
JP2013168748A2013-08-29
CN111010104A2020-04-14
Attorney, Agent or Firm:
BEIJING JINCHENG TONGDA & NEAL LAW FIRM (CN)
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