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Title:
C-CONTAINING SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/208463
Kind Code:
A1
Abstract:
The present invention provides a sputtering target which suppresses aggregation of C particle and reduces the generation of particles. A C-containing sputtering target which contains Pt, C, and one or more elements selected from among Fe and Co, and which is characterized in that, in the particle size distribution of the dissolution residue of the sputtering target, D90 (the 90% cumulative particle diameter) is 20.0 μm or less and particles having a diameter of less than 1.0 μm account for 40 cumulative % or less.

Inventors:
YAMAMOTO, Takamichi (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
NISHIURA, Masahiro (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
KUROSE, Kenta (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
KOBAYASHI, Hironori (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
MIYASHITA, Takanobu (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
NAKANO, Masahumi (Tsukuba Facility 22, Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
Application Number:
JP2019/016922
Publication Date:
October 31, 2019
Filing Date:
April 22, 2019
Export Citation:
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Assignee:
TANAKA KIKINZOKU KOGYO K.K. (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 22, 〒1006422, JP)
International Classes:
C23C14/34; B22F1/00; B22F3/10; C22C1/04; C22C1/05; C22C5/04; C22C19/07; C22C30/00; C22C30/02; C22C33/02; C22C38/00; G11B5/851
Domestic Patent References:
WO2014132746A12014-09-04
WO2016047578A12016-03-31
Foreign References:
JP2016030857A2016-03-07
JP2011175725A2011-09-08
Attorney, Agent or Firm:
ONO, Shinjiro et al. (YUASA AND HARA, Section 206 Shin-Otemachi Bldg., 2-1, Otemachi 2-chome, Chiyoda-k, Tokyo 04, 〒1000004, JP)
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