Title:
CAPACITOR AND METHOD FOR MANUFACTURING HfO2 FILM
Document Type and Number:
WIPO Patent Application WO/2019/208340
Kind Code:
A1
Abstract:
Provided is a capacitor including a dielectric layer constituted of a metal oxide having a high dielectric constant. This capacitor comprises a first electrode layer 2, a dielectric layer 3 formed on the first electrode layer 2, and a second electrode layer 4 formed on the dielectric layer 3, wherein the dielectric layer 3 is made of a metal oxide, and the metal oxide includes Hf, Bi, and a pentavalent or higher element. The metal oxide including Hf, Bi, and a pentavalent or higher element is, for example, HfO2 where a part of Hf is substituted by Bi and a pentavalent or higher element. The metal oxide may have, for example, a fluorite structure. The pentavalent or higher element may be, for example, one or more elements selected from Nb, Ta, Mo and W.
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Inventors:
YONEDA SHINGO (JP)
Application Number:
PCT/JP2019/016378
Publication Date:
October 31, 2019
Filing Date:
April 16, 2019
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01G4/33; H01G4/30
Domestic Patent References:
| WO2014080577A1 | 2014-05-30 | |||
| WO2006018930A1 | 2006-02-23 |
Foreign References:
| JP2015144251A | 2015-08-06 | |||
| JP2014535124A | 2014-12-25 |
Attorney, Agent or Firm:
KAWAMOTO, Takashi (JP)
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