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Title:
CAPACITOR AND METHOD FOR MANUFACTURING HfO2 FILM
Document Type and Number:
WIPO Patent Application WO/2019/208340
Kind Code:
A1
Abstract:
Provided is a capacitor including a dielectric layer constituted of a metal oxide having a high dielectric constant. This capacitor comprises a first electrode layer 2, a dielectric layer 3 formed on the first electrode layer 2, and a second electrode layer 4 formed on the dielectric layer 3, wherein the dielectric layer 3 is made of a metal oxide, and the metal oxide includes Hf, Bi, and a pentavalent or higher element. The metal oxide including Hf, Bi, and a pentavalent or higher element is, for example, HfO2 where a part of Hf is substituted by Bi and a pentavalent or higher element. The metal oxide may have, for example, a fluorite structure. The pentavalent or higher element may be, for example, one or more elements selected from Nb, Ta, Mo and W.

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Inventors:
YONEDA, Shingo (10-1, Higashikotari 1-chome, Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
Application Number:
JP2019/016378
Publication Date:
October 31, 2019
Filing Date:
April 16, 2019
Export Citation:
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Assignee:
MURATA MANUFACTURING CO., LTD. (10-1, Higashikotari 1-chome Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
International Classes:
H01G4/33; H01G4/30
Domestic Patent References:
WO2014080577A12014-05-30
WO2006018930A12006-02-23
Foreign References:
JP2015144251A2015-08-06
JP2014535124A2014-12-25
Attorney, Agent or Firm:
KAWAMOTO, Takashi (Kawamoto Patent Office, 15-7 Goryo Minegado-cho 3-chome, Nishikyo-ku, Kyoto-sh, Kyoto 03, 〒6101103, JP)
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