Title:
CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/115379
Kind Code:
A1
Abstract:
A cylindrical Cu-Ga alloy sputtering target having no cracks or breaks, and having no variation in relative density or Ga concentration. Hot isostatic pressing is used; a Cu-Ga alloy powder or a Cu-Ga alloy molded body is filled in to a cylindrical capsule (1) such that the filling density is at least 60%, the capsule (1) having a thickness of at least 1.0 mm and less than 3.5 mm; the capsule (1) is hot isostatically pressed; and a Cu-Ga alloy sintered body is obtained.
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Inventors:
TAKAHASHI TATSUYA (JP)
YAMAGISHI KOICHI (JP)
YAMAGISHI KOICHI (JP)
Application Number:
PCT/JP2013/077832
Publication Date:
July 31, 2014
Filing Date:
October 11, 2013
Export Citation:
Assignee:
SUMITOMO METAL MINING CO (JP)
International Classes:
C23C14/34; B22F3/15; C22C1/04; C22C9/00
Foreign References:
JP2012031508A | 2012-02-16 | |||
JP2012177156A | 2012-09-13 | |||
JPH05230645A | 1993-09-07 | |||
JPH07238303A | 1995-09-12 |
Attorney, Agent or Firm:
KOIKE, Akira et al. (JP)
Akira Koike (JP)
Akira Koike (JP)
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