Title:
CAPACITANCE TYPE PRESSURE SENSOR, METHOD FOR MANUFACTURING SAME, AND INPUT DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/073506
Kind Code:
A1
Abstract:
A dielectric layer (33) is formed on the upper surface of a fixed electrode (32), and a recess (34) is provided in the surface of the dielectric layer (33). An upper substrate (37) is layered on the surface of the dielectric layer (33) so as to cover the recess (34), and a conductive diaphragm (38) (part of the upper substrate (37)) having a thin film form is disposed over the recess (34). A first contact surface (35) and a second contact surface (36) for making contact with the diaphragm (38) are formed on the surface of the dielectric layer (33) within the recess (34). The first contact surface (35) and the second contact surface (36) are, for example, horizontal surfaces, and the first contact surface (35) and the second contact surface (36) are separated by a step, which is a vertical surface. The second contact surface (36) is in a position higher than the first contact surface (35).
Inventors:
INOUE KATSUYUKI (JP)
Application Number:
PCT/JP2012/079314
Publication Date:
May 23, 2013
Filing Date:
November 12, 2012
Export Citation:
Assignee:
OMRON TATEISI ELECTRONICS CO (JP)
International Classes:
G01L1/14; G01L9/00
Foreign References:
| JP2005233877A | 2005-09-02 | |||
| JP2003139628A | 2003-05-14 | |||
| JP2007101222A | 2007-04-19 | |||
| JP2005083801A | 2005-03-31 | |||
| JP2005321257A | 2005-11-17 | |||
| JP2007225344A | 2007-09-06 |
Attorney, Agent or Firm:
NAKANO MASAYOSHI (JP)
Masafusa Nakano (JP)
Masafusa Nakano (JP)
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Claims:
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