Title:
CAPACITATIVE ELEMENT, SEMICONDUCTOR ELEMENT SUBSTRATE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/179452
Kind Code:
A1
Abstract:
A capacitative element (14) according to the present disclosure comprises: a plurality of electroconductive film layers (31, 33) disposed facing each other on an inner circumferential surface of a through-hole (13-1) formed to penetrate a second face (P2) on the opposite side, of an insulator substrate (11), from a first face (P1) thereof; and an insulator layer (32) formed between the opposing pair of electroconductive film layers (31, 33). At least one of the plurality of electroconductive film layers (31, 33) is one of a pair of electrodes constituting the capacitative element (14), and can be connected to circuit wiring (20) formed on the second face (P2).
Inventors:
NISHIOKA YUTA (JP)
Application Number:
PCT/JP2020/006552
Publication Date:
September 10, 2020
Filing Date:
February 19, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/04; H01L21/3205; H01L21/768; H01L23/12; H01L23/522; H01L25/065; H01L25/07; H01L25/18
Foreign References:
| JPH0897375A | 1996-04-12 | |||
| JPH11195751A | 1999-07-21 | |||
| JP2017513218A | 2017-05-25 | |||
| JP2015503228A | 2015-01-29 | |||
| JPH0897367A | 1996-04-12 | |||
| JP2008288309A | 2008-11-27 | |||
| JP2015041677A | 2015-03-02 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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