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Title:
CAPACITIVE HYDROGEN SENSOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/134494
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and in particular relates to a capacitive hydrogen sensor and a fabrication method therefor. The capacitive hydrogen sensor comprises: an electrode layer formed on a dielectric layer of a substrate, wherein first electrodes and second electrodes are arranged in an interdigitated staggered manner; and a hydrogen-sensitive layer, which is formed on the electrode layer, wherein the hydrogen-sensitive layer is a polymer film that has a mesh structure. In the present invention, the polymer film that has the mesh structure is used as the hydrogen-sensitive layer, and the hydrogen-sensitive layer may have sufficiently high hydrogen permeability, so that the capacitive hydrogen sensor is more sensitive and has a faster response speed. Furthermore, the first electrodes and the second electrodes are arranged in an interdigitated staggered manner, so that the effective area of the entire capacitive hydrogen sensor becomes larger, the capacitance value is large, and the sensitivity is high. It is worth mentioning that the fabrication process in the present embodiment may be perfectly compatible with a CMOS process platform, which greatly reduces the size of a device, and is easy to combine with integrated circuit chips.

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Inventors:
XIAO HAN (CN)
SONG HUAWEI (CN)
WANG RONG (CN)
Application Number:
PCT/CN2021/099662
Publication Date:
June 30, 2022
Filing Date:
June 11, 2021
Export Citation:
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Assignee:
HANGZHOU WEIMING XINKE TECH CO LTD (CN)
ADVANCED INSTITUTE OF INFORMATION TECHNOLOGY AIIT PEKING UNIV (CN)
International Classes:
G01N27/22
Foreign References:
CN112730537A2021-04-30
CN2700876Y2005-05-18
CN110118807A2019-08-13
CN2751305Y2006-01-11
CN106556642A2017-04-05
CN111638252A2020-09-08
CN101556257A2009-10-14
EP2169400A12010-03-31
Attorney, Agent or Firm:
BEIJING CHEN QUAN INTELLECTUAL PROPERTY LAW FIRM (CN)
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