CAPACITOR AND FABRICATION METHOD THEREFOR - SHENZHEN GOODIX TECH CO LTD

Title:

CAPACITOR AND FABRICATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2021/000304

Kind Code:

A1

Abstract:

Provided in embodiments of the present application are a capacitor and a fabrication method therefor. The capacitor comprises: a semiconductor substrate comprising at least one substrate trench group; at least one stacked structure, wherein each stacked structure comprises n conductive layers and m dielectric layers, a first conductive layer among the n conductive layers is disposed above the semiconductor substrate and is disposed within the substrate trench group, an i-th conductive layer trench group is formed in an i-th conductive layer among the n conductive layers, and an (i+1)-th conductive layer among the n conductive layers is disposed above the i-th conductive layer and is disposed within the i-th conductive layer trench group, wherein m, n and i are positive integers, and n≥2, 1≤i≤n-1; at least one first external electrode, which is electrically connected to a part of the conductive layers among the n conductive layers; and at least one second external electrode, which is electrically connected to the other part of the conductive layers among the n conductive layers, an adjacent conductive layer of each conductive layer among part of the conductive layers in the laminated structure comprising at least one conductive layer among the other part of the conductive layers.

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Inventors:

LU BIN (CN)
SHEN JIAN (CN)

Application Number:

PCT/CN2019/094619

Publication Date:

January 07, 2021

Filing Date:

July 03, 2019

Export Citation:

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Assignee:

SHENZHEN GOODIX TECH CO LTD (CN)

International Classes:

H01L23/64; H01L21/02

Foreign References:

CN103208415A	2013-07-17
CN108962880A	2018-12-07
CN102709311A	2012-10-03
CN107204331A	2017-09-26
US20020005541A1	2002-01-17

Other References: