CAPACITOR STRUCTURE HAVING VERTICAL DIFFUSION PLATES

Title:

CAPACITOR STRUCTURE HAVING VERTICAL DIFFUSION PLATES

Document Type and Number:

WIPO Patent Application WO/2020/154950

Kind Code:

A1

Abstract:

A capacitor structure includes a semiconductor substrate, a first vertical diffusion plate disposed in the semiconductor substrate, a first shallow trench isolation (STI) structure disposed in the semiconductor substrate and surrounding the first vertical diffusion plate, and a second vertical diffusion plate disposed in the semiconductor substrate and surrounding the first STI structure. The first vertical diffusion plate further includes a first lower portion that is part of the semiconductor substrate. The first lower portion is surrounded and electrically isolated by a first wafer-backside trench isolation structure. The first wafer-backside trench isolation structure is in direct contact with a bottom of the first STI structure.

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Inventors:

CHEN LIANG (CN)

Application Number:

PCT/CN2019/073896

Publication Date:

August 06, 2020

Filing Date:

January 30, 2019

Export Citation:

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

H01L23/64

Foreign References:

US20070018274A1	2007-01-25
US20150263083A1	2015-09-17
US20180076277A1	2018-03-15
US20150318296A1	2015-11-05
US20110233678A1	2011-09-29
US20130049086A1	2013-02-28

Other References: