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Patent Searching and Data


Title:
CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2019/026771
Kind Code:
A1
Abstract:
Provided is a capacitor which has improved Q value in cases where a silicon nitride film is used as a dielectric film. A capacitor according to one embodiment of the present invention is provided with: a substrate; a lower electrode which is formed on the substrate; a dielectric film which is formed on the substrate or on the lower electrode; and an upper electrode which is formed on the dielectric film. The dielectric film is configured of two or more silicon nitride film layers that have different composition ratios of Si atoms to N atoms from each other; and the composition ratio of Si atoms to N atoms Si/N of the substrate-side or lower electrode-side silicon nitride film layer is higher than the Si/N composition ratio of the upper electrode-side silicon nitride film layer.

Inventors:
MATSUBARA, Hiroshi (10-1, Higashikotari 1-chome, Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
IZUMITANI, Junko (10-1, Higashikotari 1-chome, Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
HARADA, Masatomi (10-1, Higashikotari 1-chome, Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
KAGAWA, Takeshi (10-1, Higashikotari 1-chome, Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
Application Number:
JP2018/028129
Publication Date:
February 07, 2019
Filing Date:
July 26, 2018
Export Citation:
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Assignee:
MURATA MANUFACTURING CO., LTD. (10-1, Higashikotari 1-chome Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
International Classes:
H01G4/30; H01G4/33; H01L21/318
Foreign References:
JPH0745475A1995-02-14
JPS6223154A1987-01-31
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (TMI ASSOCIATES, 23rd Floor Roppongi Hills Mori Tower, 6-10-1, Roppongi, Minato-k, Tokyo 23, 〒1066123, JP)
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