REFERENCE APPLICATION DATA

[0001 ] The present application claims the benefit of U.S. provisional patent application number 61 /944753, filed February 26 ^th , 2014, which is hereby incorporated by reference in its entirety.

FIELD OF THE DISCLOSURE

[0002] The present disclosure relates generally to ionic transistors, and in more particular aspects, to ionic transistors employing a capillary pipette.

BACKGROUND

[0003] The ability to control ionic and molecular transport in nanochannels is of particular interest in the fields of physics and chemistry. To this end, nanofluidic devices such as ionic diodes and ionic transistors form important elements in applications such as ionic transport regulating systems. These devices are also important in

biotechnological applications such as separation sensing and drug delivery, for example, intracellular implantation.

[0004] An ionic transistor is a device that enables control of ionic current through a nanochannel in both directions by a small change in gate voltage. Current ionic transistors have been fabricated using techniques such as FIB drilling, etching, lithography and nanowire growing. However, these techniques are expensive and complex. Accordingly, there is a need in the art for an ionic transistor that is less costly and relatively simpler to fabricate.

SUMMARY

[0005] The present disclosure is directed to an inexpensive and simply fabricated ionic transistor. Accordingly, the embodiments herein are directed an ionic transistor cheaply and easily formed from a capillary pipette. In one aspect, a method for controlling the transport of ions through a channel, comprises the steps of: providing a capillary pipette having an inner surface defining a channel, and a conductive layer disposed about the channel; filling at least a portion of the channel with an ionic solution such that an electrical double layer forms on the inner surface of the pipette; inducing an electric potential within the ionic solution sufficient to generate a longitudinal flow of ions within the channel; inducing an electric potential in the conductive layer sufficient to alter the electrical double layer and adjust the flow of ions within the ionic solution.

[0006] According to an embodiment, the capillary pipette is dimensioned such that the electric double layer overlaps at at least one point.

[0007] According to an embodiment, the capillary pipette is dimensioned such that the electric double layer will overlap at least one point upon the application of a predetermined potential to the conductive layer.

[0008] According to an embodiment, the pipette is dimensioned to narrow at at least one point.

[0009] According to an embodiment, the narrow point of the pipette is minimally 10 nm in diameter and maximally 100 nm in diameter.

[0010] According to an embodiment, the narrow point is at a tip of the pipette 100.

[0011] According to an embodiment, the potential applied to the conductive layer causes the electrical double layer to widen, reducing the flow of ions within the channel.

[0012] According to an embodiment, the potential applied to the conductive layer causes the electrical double layer to narrow, enhancing the flow of current within the channel.

[0013] According to an embodiment, the conductive layer is comprised of one of chromium, aluminum, copper, or any other material capable of retaining a charge.

[0014] According to another aspect, a device for controlling the transport of ions through a channel, comprises: a capillary pipette having an inner surface defining a channel, wherein the pipette is adapted to form an electric double layer on the inner surface when filled with an ionic solution; a conductive layer positioned to exhibit an electric field within the channel when subjected to an electric charge, such that any electric double layer on the inner surface will be altered by the electric field. [0015] According to an embodiment, the device further comprises a voltage source positioned to induce a longitudinal flow of ions in any ionic fluid at least partially filling the channel.

[0016] According to an embodiment, the device comprises a voltage source connected to apply a charge to the conductive layer.

[0017] According to an embodiment, the capillary pipette is dimensioned to cause the electric double layer to overlap when the channel is filled with an ionic solution.

[0018] According to an embodiment, the capillary pipette is dimensioned to cause the electric double layer to overlap when the channel is filled with an ionic solution and a predetermined charge is applied to the conductive layer.

[0019] According to an embodiment, the capillary pipette is dimensioned to narrow at at least one point.

[0020] According to an embodiment, the narrow point is at the tip of the pipette 100.

[0021] According to an embodiment, the capillary pipette is minimally 10nm in diameter and maximally 100 nm in diameter.

[0022] According to an embodiment, the conductive layer is comprised of one of chromium, aluminum, copper, or any other material capable of retaining a charge.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The present invention will be more fully understood and appreciated by reading the following Detailed Description in conjunction with the accompanying drawings, in which:

[0024] Figure 1 shows a diagram of a capillary ionic transistor according to an embodiment of the present invention.

[0025] Figures 2A and 2B show a diagram of a system according to an

embodiment of the present invention.

[0026] Figures 3A, 3B, and 3C show a diagram of a device according to separate embodiments of the present invention.

[0027] Figure 4 shows a block diagram of a method according to an embodiment of the present invention. [0028] Figure 5A shows a graph according to an embodiment of the present invention showing current through a pipette 100 without a voltage applied to the gate 102.

[0029] Figure 5B shows a graph according to an embodiment of the present invention showing current through a pipette 100 with a voltage applied to the gate 102.

DETAILED DESCRIPTION

[0030] Referring now to the drawings, wherein like reference numerals refer to like parts throughout, there is seen in Figure 1 a diagram of a system for controlling ionic current through a channel, according to an embodiment of the present invention. Figure 1 shows an ionic transistor, comprising a capillary pipette 100, a gate 102, a source 104, a drain 106, and a voltage source 108 connected to gate 102. According to an embodiment, capillary pipette 100 defines an inner channel, with a diameter that can range from a minimum of 10 nm to a maximum of 100 nm value. In an exemplary embodiment, the inner channel is narrower at at least one point, such as the tip of the pipette 100. In use, capillary pipette 100 may be filled with, or otherwise placed in a bath of, an ionic solution 1 10.

[0031] Generally speaking, in operation, source 104 and drain 106 applies an electric potential difference within ionic solution 1 10. The electric potential, in turn, creates a current in the form of a flow of ions from one end of the channel to the other. Separately, ionic solution 1 10 naturally forms an electric double layer on the inner surface of the capillary 100. A potential applied to gate 102 generates an electric field within capillary pipette 100, changing the zeta potential of the electric double layer. As the zeta potential of electric double layer changes, the width of the electric double layer changes, limiting or, alternately, enhancing the flow of ions between the source and the drain 106.

[0032] Whether the current is limited or enhanced is dependent upon the polarity of the potential applied to the gate 102. If the gate 102 voltage is positive, the positive ions accumulated on the inner surface will repel from the surface, effectively shrinking the electric double layer and creating an open channel for the current to flow. By contrast, if the gate 102 voltage is negative, the width of the electric double layer will increase as a greater number of positive ions are attracted to the surface. The wider electric double layer will effectively create a barrier which limits the flow of current. In an exemplary embodiment, the pipette 100 is dimensioned such that, without a charge applied to the gate 102, the electric double layer will overlap at least one point, stopping or severely curtailing the flow of current through the channel. Accordingly, the flow of current will cease until a positive charge is applied to the gate 102 and the double layer recedes. In alternate embodiment, the pipette 100 is dimensioned such that the electric double layer will overlap upon the application of a negative charge to gate 102. One of ordinary skill will recognize that other factors, such as the composition of the pipette 100, the dimensions of gate 102, the conductivity of gate 102, the strength the potential applied to gate 102, and the concentration of ions in ionic solution 1 10 may all effect the width of the electric double layer and each may be tailored to achieve the desired current in the channel.

[0033] The capillary pipette 100 is fashioned, in the embodiment, from

borosilicate glass; however, pipette 100 may be made from quartz or from any other material suitable for fabricating a pulled capillary micropipette 100. As mentioned above, one of ordinary skill will recognize that the composition of the pipette 100 will affect the naturally forming electric double layer. Accordingly, different materials may be selected to tailor the naturally formed electric double layer for the desired

configuration of the ionic transistor.

[0034] Figure 3 shows several embodiments of capillary pipette 100. Figure 3A shows capillary pipette 100-1 narrowing at one tip, according to one embodiment.

Figure 3B, according to another embodiment, shows a capillary pipette 100-2 narrowing at both tips. Figure 3C shows a capillary pipette 100-3 with a narrow channel in the middle. Each embodiment may be best suited for different applications. Current flow through the pipette 100 pore has a preferable direction from small opening to wide, while current in reverse direction is suppressed. Thus, pipette 100-1 may be best suited in applications where current in one direction needs to be suppressed. By contrast, 100-2, having two tips, and 100-3 having the same tapering in both directions, may be best suited for applications where current should be suppressed in both directions. However a person of ordinary skill would recognize that these shapes are not exclusive, nor are the applications of the shapes limited to those suggested - the pipette 100 may be any combination of the shapes suggested as long as at least one point of capillary pipette 100 is narrow enough to cause the electric double layer to overlap when the pipette 100 is in use, and a voltage is applied to the gate 102. In an exemplary embodiment, the diameter of at least one point in the pipette 100 is comparable to the Debye length, or having a maximum of 100 nm.

[0035] In an exemplary embodiment, the gate 102 covers the entire outer surface of the capillary pipette 100. In an alternative embodiment, the gate 102 may only cover a portion, such as the tip or the center of the pipette 100. In the embodiment, the gate 102 may be implemented as a film or coating over capillary pipette 100. It will be obvious to a person of ordinary skill in the art that the thickness of the gate 102 can vary while maintaining its function of retaining a charge. In another embodiment, the gate 102 may consist of one or more wires, or a conductive surface housed in a sleeve and placed over capillary pipette 100. In an exemplary embodiment, the gate 102 may be placed over the narrowest point of the pipette 100. A person of ordinary skill in the art will recognize that the gate 102 may be placed in any fashion that would exhibit an electric field on the interior of the capillary pipette 100, to strengthen, or alternately weaken, the electric double layer.

[0036] If the gate 102 is located near the end of the pipette 100, additional current suppressing behavior may arise due to a depletion barrier forming at the tip of the pipette 100. Figure 2 demonstrates this behavior. Applying a negative potential to gate 102 will cause negative ions to collect around the tip of the gate 102, repelling negative ions within the ionic bath surrounding the tip, and consequently forming a depletion barrier. As a result of the decreasing number of ions of one polarity around the pore, the concentration of ions with the opposite polarity will also decrease in order to maintain electro-neutrality. The above behavior has the net effect of further suppressing ionic current in the channel. Alternately, when a positive potential is applied to gate 102, the zeta potential of the electric double layer and depletion barrier recedes, and the flow of ions between source 104 and drain 106 is enhanced.

[0037] In an exemplary embodiment, the gate 102 may be comprised of chromium, which adheres well to glass, and forms a consistent, continuous coating. However, in alternative embodiments the gate 102 may be made out of copper, aluminum, or any other conductive or semi-conductive material that would allow the gate 102 to maintain a certain potential.

[0038] Returning to Fig. 1 , source and gate 102 may be attached to the same voltage 108 source or independent voltage sources. If the source and gate 102 are attached to the same voltage source 108, intervening circuitry may be implemented so that the voltage applied to the source 104 and gate 102 may be adjusted independently. Furthermore, a current amplifier may be applied to source electrode 104.

[0039] Furthermore, as shown in Figure 1 , the capillary pipette 100 may further comprise an insulator 100 covering the gate 102 to prevent the gate 102 from shorting if the pipette 100 is immersed in bath of ionic solution.

[0040] Figure 4 shows a method of practicing the present invention, according to an illustrative embodiment. In step 400, a capillary pipette 100 is provided, wherein at least a portion of the pipette 100 is covered in a conductive layer. The capillary pipette 100 has an inner surface defining a channel. In step 402, at least a portion of the channel is filled with an ionic solution, forming an electric double layer within the capillary pipette 100. In step 404, a source and drain 106 is provided to create a potential difference within the capillary pipette 100. The source and drain 106 may be positioned anywhere within capillary pipette 100 sufficient to create a potential difference within the ionic solution and through at least a portion of the pipette 100. Specifically, the source and drain 106 are positioned to generate a longitudinal flow of ions through the capillary pipette 100 - in other words, to generate a current flowing through the pipette 100 which may be adjusted by applying a voltage to the gate 102 in later steps. For example, as shown in Figure 1 , if capillary pipette 100 is placed in a bath of ionic solution, the source could be place in the top of the pipette 100, while the drain 106 could be located within the bath of ionic solution. In step 406, a voltage is applied to conductive layer 102 to control ionic flow through the pipette 100 by altering the width of the electric double layer. This step may include the step of first attaching the voltage source of the conductive layer. Furthermore, as described above, different polarity voltages may be applied to alternately strengthen or weaken the electric double layer and modify the flow of current. [0041] As an example of the above device and method, a capillary pipette 100 was fabricated from borosilicate glass capillaries with initial inner diameter 0.5 mm and outer diameter 1 mm. Pulling was performed with commercial puller P-2000 ("Sutter, Novato", CA). Prior to pulling, capillaries were cleaned thoroughly with alcohol. The tip diameter of the nanopore and wall thickness after pulling was determined by Scanning Electron Microscopy (SEM) images, because wall thickness can vary depending on pulling settings, especially temperature. Pipettes 100 with 60 nm pore diameter were used, and each having a wall thickness about 25-30 nm at the tip. A 15 nm thick film of Chromium on outer wall of pipette 100 served as a Gate 102 electrode. Deposition of chromium was performed using the electron beam evaporation technique, with pipette 100 tip slightly tilted upwards to prevent blocking and deposition inside the pore.

Different thicknesses of Cr layers were tested, from 5 nm to 50 nm. Layers thicker than 30 nm often blocked the pore, whereas, films below 10 nm were mechanically unstable. After Cr deposition, micropipette 100 tip was coated with polymer by dipping it in a photoresist solution. In order to remove excessive polymer and make the coating uniform, pipette 100 was placed into a spinner and centrifuged for 60 seconds. After that, to prevent blockade of the pore, the pipette 100 was connected to air pump with flow direction from narrow to wide opening. As a final step, to solidify photoresist, the pipette 100 was baked at 120 degrees Celsius for 2 minutes.

[0042] The coated micropipette 100, described above, was filled with sodium chloride solution and immersed in the bath with the same solution. An Ag/AgCI measurement electrode (source electrode) was placed inside pipette 100, and reference electrode (drain electrode 106) immersed into the bath solution close to capillary tip. A gate 102 electrode was attached to pipette 100 coated with Cr, above the layer of photoresist. To record the source 104-drain 106 current, an Axopatch 200B amplifier was used in voltage clamp mode with a low-pass Bessel filter at 2 or 5 kHz bandwidth. The signal was digitized by an Axon Instruments Digidata 1440A with sampling rate 250 kHz, and recorded by AxoScope 10.2 (Axon Instruments, USA). The Axopatch amplifier also serves as a voltage source between source 104 and drain 106 electrodes. The gate 102 was applied by regulated DC power supply. A picoammeter was connected in series with the gate 102 in order to measure leakage current. [0043] Figure 5A shows the results of the applying a voltage between the source and drain 1 06, without a potential applied to the gate 1 02. Positive current through the pore was established when positive voltage was applied to the Source electrode 104 with respect to grounded Drain 1 06 electrode. This means that positive potassium ions drifted from the wide opening of pipette 1 00 to small opening. The ISD-VSD curve was measured for potentials from -1 V to 1 V with interval of 1 00 mV, for three different KCI concentrations 1 M, 0.1 M, 0.001 M and zero Gate 1 02 voltage. For all concentrations pH value was buffered to 7. High concentrations show almost linear dependence, when low concentrations present rectification phenomena: allowing more current to flow in one direction than the other. Current flow through the pipette 100 pore has a preferable direction from small opening to wide, while current in reverse direction is suppressed.

[0044] Figure 5B shows the results of the example with a gate 1 02 voltage applied. Gate 1 02 voltage (V _G ) was introduced with no potential difference between Source and Drain 1 06 (V _S D = 0 v). Leakage current between Gate 1 02 and Source ( eak) did not exceed 1 5 pA for V _G = ±5 V. ISD-VSD dependence for three different Gate 1 02 potentials is presented on for V _G =0 we observed typical l-V curve for conical capillary pore. For positive potential, which is increasing from V _S D = 0 V to V _S D = +1 V, current through nanochannel will saturate and I SD = 43 pA. While for reverse potential, which decreased from V _S D = 0 V to V _S D = -1 V, current showed almost linear dependence and ISD = -84 pA. The rectification ratio, which can be calculated as ratio of channel conductance at V _S D = +1 V to channel conductance at V _S D = -1 V, was equal to 0.51 .

[0045] For V _G = -5 V even more current suppression for positive voltage was observed. Current saturated and reached value I _S D = 31 pA for V _S D = +1 V. However, for negative Source-Drain 1 06 voltage current suppression was more significant and I _S D equaled -41 pas for V _S D equal to -1 V. Therefore, rectification ratio increased to the value 0.76. For V _G equal to +5 V, the opposite behavior was observed. The positive gate 1 02 potential strongly affected positive current, raising conductance and having almost no effect on negative voltage current. When V _S D = +1 V current between Source and Drain 1 06 electrodes rose to ISD = 79 pA, and for V _S D = -1 V current was ISD equal to 90 pA. In this case rectification ratio was 0.88.