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Title:
CARBON- BASED RESISTIVE MEMORY ELEMENT AND MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/001599
Kind Code:
A3
Abstract:
Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material, preferably hydrogen, nitrogen or a transition metal, and/or annealing the material. A corresponding resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material comprising carbon that is doped with a dopant material.

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Inventors:
CAIMI DANIELE (CH)
ELEFTHERIOU EVANGELOS S (CH)
POZIDIS CHARALAMPOS (CH)
ROSSEL CHRISTOPHE P (CH)
SEBASTIAN ABU (CH)
Application Number:
PCT/IB2011/052790
Publication Date:
March 22, 2012
Filing Date:
June 24, 2011
Export Citation:
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Assignee:
IBM (US)
CAIMI DANIELE (CH)
ELEFTHERIOU EVANGELOS S (CH)
POZIDIS CHARALAMPOS (CH)
ROSSEL CHRISTOPHE P (CH)
SEBASTIAN ABU (CH)
International Classes:
G11C13/00; H01L45/00
Domestic Patent References:
WO2010017427A12010-02-11
WO2011106155A22011-09-01
Foreign References:
JP2010141046A2010-06-24
Other References:
SILVA S R P: "PROPERTIES OF AMORPHOUS CARBON", 2003, IEE INSPEC, London, GB, ISBN: 0-85296-961-9, article GERSTNER E G: "Bistability in a-C for memory and antifuse applications", pages: 318 - 323, XP002402610
Attorney, Agent or Firm:
MEYER, Michael et al. (IBM Research - ZurichIntellectual Property La, Säumerstrasse 4 Rüschlikon, CH)
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