I/O CELL ESD SYSTEM

Background Of The Invention Field of the Invention [0001] This invention relates in general to electrostatic discharge (ESD) and more specifically to ESD circuitry arrangement in an integrated circuit.

Description of the Related Art

[0002] An integrated circuit may be subjected to a damaging Electrostatic Discharge (ESD) event in the manufacturing process, during assembly and testing, or in the ultimate system application. In conventional integrated circuit (IC) ESD protection schemes, special clamp circuits are often used to shunt ESD current between the power supply rails and thereby protect internal elements from damage. A type of ESD clamp circuit, known as an active Metal Oxide Semiconductor Field Effect Transistor (MOSFET) clamp circuit, typically comprises two parts: a trigger circuit and a large MOSFET clamp transistor. The conduction of the clamp transistor is controlled by the trigger circuit. Active MOSFET clamp circuits may be employed in networks distributed along the power buses to provide robust and consistent ESD protection for all the Input/Output (I/O) pads in the IC. Multiple embodiments of such networks are shown in U.S. Patent 6,385,021 entitled "Electrostatic Discharge (ESD) Protection Circuit" and in U.S. Patent 6,724,603 entitled "Electrostatic Discharge Protection and Method of Operation." Both patents are assigned to the assignee hereof.

[0003] Figure 1 illustrates one such distributed ESD network 100 in an IC to protect multiple I/O pads in a bank of I/O cells. Five I/O cells 110-114 are shown in Figure 1. However, the distributed network may encompass a larger bank of I/O cells around the IC periphery region as indicated by the dots placed to the left and right of the elements shown in Figure 1. I/O cell 110 includes an external connection QJO) pad 120 which is coupled between a Vss bus 102 and a V _DD bus 103 via diodes 122 and 123, respectively. A clamp N- channel MOSFET (NMOSFET) 125 is connected between the V _ss bus and the V _DD bus. The gate of clamp NMOSFET 125 is connected to a trigger bus 109. Not shown in VO cell 110, but assumed present is circuitry for normal (i.e. not ESD) VO cell operation. VO cells 111-

114 are each identical to I/O cell 110. I/O cells are cells that include circuitry for conveying input signals, output signals, or both input signals and output signals.

[0004] In addition to I/O cells, the I/O ring around the periphery of an IC typically contains several power (VDD) and ground (Vss) cells. An example V _DD cell 116 and Vss cell 117 are shown in Figure 1. The V _D D cell includes an external connection V _DD pad 130 which connects to the on-chip V _D D bus 103 while the Vss cell includes an external connection Vss pad 132 which connects to the on-chip Vss bus 102. The V _DD cell contains a trigger circuit 135 which is powered by the V _DD bus and the Vss bus and provides an output signal which drives trigger bus 109. The V _DD cell also contains a clamp NMOSFET 136. The gate (a control terminal of a MOSFET) of clamp NMOSFET 136 is connected to the trigger bus. The Vss cell contains trigger circuit 140 and clamp NMOSFET 141, which are similar to the trigger circuit and clamp device in the V _DD cell.

[0005] Integrated circuits are often most susceptible to damage during positive ESD events coupled onto an I/O pad referenced to grounded Vss- The response of ESD network 100 to this event applied to I/O pad 120 in Figure 1 is as follows. Diode 123 forward biases as the I/O pad voltage very quickly ramps above about 0.8V. This produces a rapid voltage increase over time (dV/dt or voltage slew rate) on the V _DD bus 103. Trigger circuits 135 and 140 may be of a type of trigger circuit that contains a resistor-capacitor (RC) based voltage slew rate sensor tuned to respond only to very fast ESD-related transients, and a series of inverting buffer stages to drive the trigger circuit output. In response to an ESD dV/dt transient on the V _DD bus, trigger circuits 135 and 140 drive trigger bus 109 to the V _DD bus voltage. This turns on the multiple clamp NMOSFETs 125, 136, and 141 distributed in the I/O and power/ground cells, respectively. Once turned on, this cumulative network of clamp NMOSFETs acts as a low resistance shunt between the V _D D bus and the Vss bus. The clamp NMOSFETs remain conductive for a period of time which is determined by an RC time constant of the trigger circuit. The trigger circuit should drive the clamp NMOSFETs for a period of time which exceeds the typical duration of an ESD event (e.g. 300-600 nanoseconds), yet avoid false triggering of the clamp NMOSFETs during normal ramp up of the V _DD bus. With some examples, the VD _D ramp-up during normal operation typically requires 1-5 microseconds.

[0006] In some IC designs, there are very few or no power or ground pads cells placed in the VO ring. This is a problem with the ESD network approach of Figure 1 because trigger circuits must typically be placed at least once for every 10-15 I/O cells in order to efficiently drive the clamp NMOSFETs distributed in the nearby I/O cells. For example, it would be difficult to ESD protect an unbroken, tightly abutted bank of 20 or more I/O cells placed without any intervening power or ground cells. In addition, advanced packaging options often eliminate power or ground cells in the I/O ring altogether. For example, in an IC designed for flip-chip packaging, off-chip connections to the power and ground buses are typically made directly down onto buses in the IC core region, without the need for any periphery power or ground cells in a bank of I/O cells. Thus there is a need for a new ESD network approach especially which can fully protect a large bank of tightly abutted I/O cells without any intervening power or ground cells.

Brief Description Of The Drawings

[0007] The present invention may be better understood, and its numerous objects, features, and advantages made apparent to those skilled in the art by referencing the accompanying drawings.

[0008] Figure 1 is a circuit schematic illustrating a prior art ESD protection network.

[0009] Figure 2 is a circuit schematic illustrating one embodiment of an ESD protection network according to the present invention.

[0010] Figure 3 is a circuit schematic illustrating another embodiment of an ESD protection network according to the present invention.

[0011] Figure 4 is a schematic of one embodiment of an ESD trigger circuit according to the present invention.

[0012] Figure 5 is a partial top view of one embodiment of active circuitry of an integrated circuit according to the present invention.

[0013] Figure 6 is a circuit schematic illustrating another embodiment of an ESD protection network according to the present invention

[0014] The use of the same reference symbols in different drawings indicates identical items unless otherwise noted. The figures are not necessarily drawn to scale.

Detailed Description

[0015] The following sets forth a detailed description of a mode for carrying out the invention. The description is intended to be illustrative of the invention and should not be taken to be limiting.

[0016] In one embodiment of the present invention, an ESD trigger circuit is located in every fourth or fifth VO cell of an I/O cell bank while the remaining I/O cells of the bank include an ESD clamp NMOSFET (or another type of ESD clamp device), wherein the ESD trigger circuits drive the NMOSFETs in the neighboring I/O cells. With some embodiments, a trigger bus is used to couple the output of the trigger circuit in a first type of I/O cells (i.e. those with trigger circuits) to the gates of the clamp NMOSFETs (or other type of ESD clamp devices) distributed in a second type of I/O cells (i.e. those with clamp NMOSFETs). In some embodiments, both types of I/O cells may be identical in all other respects. In some embodiments, an ESD trigger circuit in one I/O cell of an VO cell bank may drive at least the two clamp NMOSFETs in adjacent I/O cells. At least some embodiments implement an ESD protection network such that a large bank of tightly abutted I/O cells may be protected without any intervening power or ground cells. Power and ground cells have been utilized for trigger cell placement in prior art ESD protection networks.

[0017] Figure 2 illustrates an ESD protection network in a bank of VO cells in an integrated circuit according to one embodiment of the present invention. Each I/O cell may be described in both a schematic sense, as shown in Figure 2, and in a physical layout sense (e.g. see Figure 5), occupying a specific area in the IC periphery. As shown in the embodiment of Figure 2, bank 201 includes I/O cells having an VO pad and ESD elements. Not shown in the VO cells of Figure 2, but assumed present, is the VO circuitry desired to be protected from ESD damage, such as for example P-channel MOSFET (PMOSFET) and N- channel MOSFET (NMOSFET) output drivers, input buffers, and other circuit components typically included for normal VO operation. In one embodiment, bank 201 is part of a larger bank of VO cells around the IC periphery region as indicated by the dots placed to the left and right of the elements shown in Figure 2. The term "I/O cells" encompasses input-only cells, output-only cells, or input and output cells. The term "I/O pads" encompasses pads that convey only input signals, only output signals, or both input signals and output signals.

[0018] Each I/O pad (e.g. 243) is coupled to a V _DD power supply bus 203 via a diode (e.g. diode 245) designated as diode Al for each cell, and coupled to a Vss power supply bus 207 via a diode designated as diode B (e.g. diode 247). In other embodiments, each I/O cell may include multiple pads such as two I/O pads or an I/O pad and a power pad (a voltage or ground pad).

[0019] Bank 201 includes two types of I/O cells. The first type of I/O cells (e.g. cells 211, 221), hereafter referred to as trigger I/O cells, include an ESD trigger circuit (e.g. 231, 232). The second type of I/O cells (e.g. cells 209, 213, 215, 217, 219, and 223), hereafter referred to as clamp I/O cells, include an ESD clamp device (designated as Ml), which in the embodiment shown is implemented as an NMOSFET (e.g. NMOSFET 241). Other embodiments may include other types of ESD clamp devices e.g. a PMOSFET, a bipolar transistor, or a semiconductor controlled rectifier (SCR).

[0020] Each ESD trigger circuit (231 and 232) in the trigger I/O cells (211 and 221) includes circuitry for detecting an ESD event. In one embodiment, an ESD event is defined as an event having a rapid rise time characteristic of e.g. 100 picoseconds to 60 nanoseconds. However, an ESD event may be defined to have other rise times or by other characteristics in other embodiments. In response to detecting an ESD event, the trigger circuit drives the trigger bus 205 to approximately the voltage level of V _DD bus 203 to make conductive the Ml clamp devices of the clamp VO cells (209, 213, 215, 217, 219, and 223) to discharge the current of the ESD event from V _DD bus 203 to V _S s bus 207.

[0021] In one example showing the operation of the ESD protection network in bank 201 , a positive ESD event is coupled to I/O pad 233 with respect to grounded Vss bus 207. This produces via forward biased Al diode 235 a voltage with a large slew rate (dV/dt) on VD _D bus 203. Trigger circuits 231 and 232 sense the rapid dV/dt on V _DD bus 203, and in response drive trigger bus 205 to a voltage level approximately equal to the voltage level of the V _DD bus 203, which makes conductive each of the Ml clamp NMOSFETs. In this manner the V _DD bus 203 is discharged to ground via drain to source conduction of the multiple Ml clamp NMOSFETs which operate in parallel. The ESD network shown in Figure 2 discharges other types of ESD events as well.

[0022] One advantage of the embodiment shown in Figure 2 is that all elements of the ESD network for protecting VO cell bank 201 reside within the VO cells themselves. Note that no power or ground cells are needed for ESD protection in the embodiment of Figure 2. This may be, in some embodiments, a significant improvement over prior art distributed rail clamp networks.

[0023] Figure 2 shows eight VO cells in bank 201. However, bank 201 may include more of both trigger and clamp I/O cells, located adjacent to cell 209 and cell 223. In one embodiment, the trigger VO cells are placed once for about every four or five clamp VO cells. In other embodiments this placement frequency may vary. In some embodiments, the placement frequency may be in a range of one trigger I/O cell for every one to twenty clamp I/O cells. In one embodiment, bank 201 may form a closed ring around the entire IC, with hundreds, or even thousands of I/O cells. In this case, V _DD bus 203 and Vss bus 207 may also form unbroken rings around the IC periphery. In other embodiments, an IC may contain multiple banks of VO cells similar to Figure 2 or having other designs. Each of these multiple VO banks may utilize a same or different V _D D bus and Vss bus. In some embodiments, VO banks are located only around the perimeter of the integrated circuit. In other embodiments, VO banks may be located partially or exclusively within the IC core region.

[0024] Figure 3 illustrates another embodiment of a bank of VO cells 301 of an integrated circuit according to the present invention. In the embodiment of Figure 3, the ESD protection network includes an additional boost bus 302. In contrast to the network of Figure 2, boost bus 302, rather than the V _D D bus 303, powers the trigger circuits (e.g. trigger circuit 331 in VO cell 315). Each VO pad of bank 301 is coupled to boost bus 302 via an A2 diode (e.g. diode 329 in VO cell 313).

[0025] A feature of this network is that the ESD trigger circuits are now coupled to any stressed VO pad via boost bus 302 which is separate from the high ESD current VD _D bus 303. During a positive ESD event applied, for example, to VO pad 321 with respect to Vss bus 307 grounded, the primary (high current) ESD path is through forward biased Al diode 327 to the V _DD bus, then through each of the Ml clamps to the V _S s bus 307. Significant IR voltage drops occur along this path due to the high ESD current (e.g. 2-4 Amperes or greater), such that the Ml clamp NMOSFET drain to source voltage (Vds) is often one half or less of the voltage on

the stressed VO pad 321. A secondary (low current) ESD path is through forward biased A2 diode 329 to the boost bus 302, which powers the trigger circuits. The trigger circuits then detect a dV/dt transient on the boost bus 302 and drive the Ml clamp gates to approximately the boost bus voltage via the trigger bus 305. Driving the Ml clamp gates requires very little current. Therefore, due to the very small ESD current routed along the boost and trigger buses, there is a diode voltage drop (-0.8V) due to the A2 diode, but very little IR voltage drop between the stressed I/O pad 321 and the gates of the Ml clamps. Indeed the boost and trigger buses may be made quite narrow and resistive without imparting any significant IR drop during ESD events. Therefore, due to the fact that the trigger circuits are coupled to the stressed I/O pad via the low IR drop boost bus 302, rather than the high IR drop VD _D bus 303, the gate to source voltage (Vgs) for the multiple Ml clamps is typically greater than the drain to source voltage (Vds). The on-resistance of a clamp NMOSFET is approximately inversely proportional to Vgs under these bias conditions. This helps to maximize the distributed rail clamp network performance and minimize the layout area required to implement robust ESD protection circuits of a given performance level. The "boosted" ESD network illustrated in Figure 3 may provide enhanced ESD protection as compared to the non-boosted circuit shown in Figure 2. A more detailed explanation and examples of boosted ESD protection networks may be found in US patent number 6,724,603.

[0026] As in the ESD network of Figure 2, bank 301 comprises VO cells of both types e.g. trigger VO cells and clamp VO cells. A single trigger I/O cell 315, with trigger circuit 331 is shown in Figure 3. Also shown are multiple clamp VO cells (e.g. 309, 311, 313, 317) with ESD clamp devices (implemented with NMOSFETs in the embodiment shown) designated Ml (e.g. 323). Figure 3 shows five VO cells in bank 301. Bank 301 may contain additional VO cells of both types as indicated by the three dots shown to the left of I/O cell 309 and to the right of VO cell 317. Ih the ESD network of Figure 3, every fourth or fifth I/O cell in the VO bank contains a trigger circuit to drive the clamp NMOSFETs in the remaining nearby clamp VO cells. However, in other embodiments the frequency of placement of trigger VO cells among clamp I/O cells may vary. Bank 301 may form a closed ring around the entire IC, or may form one of multiple VO banks in the IC. Note that no power or ground cells are shown in Figure 3. All elements of the ESD network for protecting the VO cell bank 301 reside within the VO cells themselves.

[0027] In one embodiment, multiple ESD trigger circuits may operate in parallel to drive a single trigger bus (e.g. 305). In another embodiment, the trigger bus may be partitioned such that a single trigger circuit (e.g. 331) drives the trigger bus partition. In this embodiment, each ESD clamp device would be driven by a single trigger circuit. In other embodiments, a boost bus (e.g. 302) may be partitioned as well.

[0028] An advantage of the ESD networks illustrated in Figures 2 and 3 is that they may enable robust ESD protection for IC designs without any ESD-specific rules for power or ground cell placement frequency within an FO bank. This may greatly increase the design options and flexibility for the JJO ring designer. In one embodiment, power or ground cells may be placed very infrequently in the I/O ring (i.e. once for every 20 I/O cells or more). In another embodiment, the I/O ring may not contain any power or ground cells, as may be the case for some integrated circuits bound for flip-chip packages. With no requirements for ESD elements other than those found in the trigger and clamp VO cells, the full active MOSFET rail clamp ESD protection circuitry for an I/O cell bank may be contained wholly within the physical extent of the I/O cells within the bank.

[0029] Figure 4 is a circuit diagram of one embodiment of ESD trigger circuit 331. Trigger circuit 331 includes an RC circuit of capacitive element 405 and resistive element 407 for detecting a dV/dt transient on the boost bus 302. If the voltage rise time is sufficiently fast (e.g. 60 ns or less), transistor 409 is turned on long enough to pull node 410 down to the voltage of the Yss bus 307 (logic level low). Inverter 417 then outputs a voltage about equal to the boost bus 302 (logical level high) onto trigger bus 305 to turn on the Ml clamp devices (e.g. 323 in Figure 3). Current source 411 and capacitive element 415 act as a delay-on circuit for holding the input of inverter 417 low for a period of time appropriate to fully discharge the ESD event (e.g. typically 300-600 ns for some embodiments).

[0030] In some embodiments, trigger circuit 331 may also include a VD _D boost circuit (not shown in Figure 4). A V _D D boost circuit may be used to increase the boost bus voltage to the voltage applied to the VD _D bus during a positive ESD event applied directly to the V _DD bus. The boost circuit may include a voltage comparator circuit and if the voltage of the VD _D bus exceeds the boost bus during an ESD event, the boost circuit pulls the boost bus up to the voltage of the VD _D bus.

[0031] Figure 4 shows one type of ESD trigger circuit that may be implemented in the ESD protection network of Figure 3. This trigger circuit may be used for the non-boosted network of Figure 2 by powering the trigger circuit with the V _DD bus rather than the boost bus. Other embodiments may implement other types of ESD trigger circuits e.g. including other types of RC or transient detector trigger circuits or voltage threshold detector trigger circuits.

[0032] Figure 5 is a partial top view of the physical layout of active circuitry (e.g. transistors, capacitors, resistors, diodes) of two I/O cells within an VO cell bank (e.g. 301) of an integrated circuit 501. In one embodiment, the active circuitry includes devices having portions implemented in a semiconductor material e.g. of the substrate as with bulk semiconductor (e.g. silicon, SiGe, GaAs) devices. In another embodiment, the active devices may be implemented in Silicon on Insulator (SOI) structures. Figure 5 shows portions of the physical layout of the active area for two VO cells: clamp VO cell 313 and trigger I/O cell 315. It is assumed that other I/O cells (of both types) may be found to the right and left of the cells shown in Figure 5. In one embodiment, I/O cells 313 and 315 are located in the periphery VO ring of an IC.

[0033] As shown in Figure 5, the active circuitry physical layouts for cells 313 and 315 are each laid out as per an active circuitry floor plan, which is similar for both types of VO cells. For example, the Al diodes (327 and 337) of both cells are located in the same area of each floor plan. Also, the B diodes (e.g. 325 and 335), the A2 diodes (329 and 339), the

NMOSFET buffers (buffer 507 of cell 313 and buffer 514 of cell 315) and PMOSFET buffers (buffer 505 of cell 313 and buffer 511 of cell 315) are located in the same areas of the floor plans. Also, cell 313 includes additional VO circuitry 539 and cell 315 includes additional I/O circuitry 541, which are partially shown in Figure 5, and are located in the same area of the floor plans.

[0034] In the embodiment shown, clamp VO cell 313 includes Ml clamp device 323 located between NMOS output buffer 507 and PMOS output buffer 505. For other clamp VO cells of bank 301 (e.g. cells 309, 311 and 317), the Ml clamp device is located in the same area of the floor plan as in cell 313.

[0035] In the embodiment shown, trigger circuit 331 of trigger VO cell 315 is located in area 531 between NMOS output buffer 514 and PMOS output buffer 511. Area 531 resides in the same area of the active circuitry floor plan of trigger VO cell 315 as Ml clamp device 323 resides within clamp I/O cell 313. Area 531 is shown in Figure 5 including several active devices (illustrated as rectangles) including, for example, capacitive element 405 and resistive element 407. Device 545 is a PMOSEET pull up transistor in inverter 417. Other trigger VO cells of bank 301, if present, also include an ESD trigger circuit located in the same area (e.g. 531) of the floor plan as in cell 315. Area 531 may include other devices in other embodiments.

[0036] In the embodiment of Figure 5, Ml clamp device 323 in clamp FO cell 313, and trigger circuit 331 in area 531 of trigger I/O cell 315, are of about the same physical size and occupy the same physical layout area of the floor plan of their respective VO cells. For this reason, a design layout of a single base I/O cell floor plan may be created with nothing placed in this clamp/trigger circuit area. A clamp VO cell or a trigger VO cell can be designed from this base I/O cell floor plan by dropping in either an Ml clamp device (e.g. 323) or a trigger circuit (e.g. 331). A design for an VO bank (e.g. I/O bank 301 in Figure 3) may then be easily created by placing clamp I/O cells or trigger VO cells as needed. This approach, utilizing a base VO cell floor plan with interchangeable Ml clamp or trigger circuit provides a very efficient means of implementing the ESD network in a bank of VO cells.

[0037] In some embodiments, the floor plan of the base I/O cell is configured so that all the connections to the boost bus 302, V _DD bus 303, trigger bus 305 and Vss bus 307 may easily be made within the area to be occupied by either the Ml clamp device or the trigger circuit.

[0038] In some embodiments, trigger circuit 331 and Ml clamp device 323 occupy about the same layout area of the floor plans of the VO cells. Otherwise, some area may be wasted in the VO cell with the smaller of the two ESD elements, since the base VO cell floor plan must accommodate the larger of the two ESD elements. Therefore, this equal area consideration may be a constraint when running ESD network circuit simulations in e.g. SPICE to determine the size of the Ml clamp devices, the size of the trigger circuit elements,

and the optimum trigger circuit placement frequency (trigger FO cell placement frequency) in a bank of FO cells.

[0039] Referring again to Figure 5, other I/O cells of other banks of an integrated circuit may have other physical layouts with different floor plans. For example, the layout of Figure 5 shows the PMOSFET buffers (e.g. 505) and NMOSFET buffers (e.g. 507) intermixed with ESD circuitry (e.g. Ml clamp device, Al diode, A2 diode, B diode, and trigger circuitry). However, in other embodiments, these areas may be separated from the ESD devices, or intermixed in other arrangements. Also in other embodiments, the ESD devices may be intermixed with other I/O circuitry (e.g. 539 and 541) of an I/O cell instead of being separate as shown in Figure 5. Also in other embodiments, the floor plan of an I/O cell may have other forms than that shown in Figure 5. For example, an I/O cell configured as input only need not include PMOSFET and NMOSFET output buffers. Other embodiments of FO cells may include other circuitry.

[0040] Figure 6 is a circuit diagram of another embodiment of a bank of I/O cells 601 of an integrated circuit according to the present invention. The ESD protection network of

Figure 6 is similar to the ESD protection network of Figure 3 except that the first type of FO cells (e.g. 615) with ESD trigger circuits (e.g. 625) also includes a clamp device, designated as M2 clamp device (e.g. 621) and implemented with an NMOSFET. The second type of FO cells (e.g. 613) are the same as before, with Ml clamp devices (e.g. 623). In one embodiment, the M2 clamp device occupies a smaller physical layout area of the FO cell than that of the Ml clamp devices.

[0041] The embodiment of Figure 6 is most efficient when the combined physical layout area of the trigger circuit 625 and M2 clamp device 621 is about equal to the physical layout area of the Ml clamp device (e.g. 623). Similar to the configuration described in reference to Figure 5, a base FO cell floor plan may be created which allows for interchangeable placement of either the combined trigger circuit and M2 clamp device (to make the first type of FO cell) as e.g. in area 531 or the Ml clamp device (to make the second type of FO cell).

[0042] For some IC applications, including an M2 clamp device and trigger circuit in the first type of FO cell, and an Ml clamp device in the second type of FO cell may

advantageously provide for greater discharge capability for the entire network while minimizing the physical layout area of the combined ESD elements.

[0043] In one embodiment, an integrated circuit includes a plurality of I/O cells. Each I/O cell of the plurality of I/O cells is one of a first type or of a second type. Each I/O cell of the first type includes an ESD trigger circuit for detecting an ESD event. Each I/O cell of the second type includes an ESD clamp device for providing a discharge path for discharging current from an ESD event in response to a detection of an ESD event by an ESD trigger circuit of an I/O cell of the first type. Each I/O cell of the second type does not include an ESD trigger circuit to which the ESD clamp device of the FO cell is responsive.

[0044] In one embodiment, an integrated circuit includes a plurality of I/O cells. Each has an active circuitry physical layout as per an active circuitry floor plan. Each of a first subset of I/O cells of the plurality of I/O cells includes an ESD clamp device at a same designated area of its active circuitry floor plan. Each of a second subset of I/O cells of the plurality of I/O cells includes circuitry for an ESD trigger circuit at the same designated area of its active circuitry floor plan.

[0045] In one embodiment, an integrated circuit includes a plurality of I/O cells located in a bank of cells. Each FO cell of the plurality of FO cells includes an FO pad and each FO cell of the plurality of FO cells is one of a first type or of a second type. Each FO cell of the plurality of FO cells has an active circuitry physical layout as per an active circuitry floor plan. Each FO cell of the first type includes an ESD trigger circuit for detecting an ESD event. For each FO cell of the first type, circuitry of the ESD trigger circuit is at a same designated area of its active circuitry floor plan. Each FO cell of the second type includes an ESD clamp device for providing a discharge path for discharging current from an ESD event in response to a detection of an ESD event by an ESD trigger circuit of an FO cell of the first type. Each FO cell of the second type does not include an ESD trigger circuit to which the ESD clamp device of the FO cell is responsive. For each FO cell of the second type, the ESD clamp device is located at the same designated area of its active circuitry floor plan.

[0046] While particular embodiments of the present invention have been shown and described, it will be recognized to those skilled in the art that, based upon the teachings herein, further changes and modifications may be made without departing from this invention

and its broader aspects, and thus, the appended claims are to encompass within their scope all such changes and modifications as are within the true spirit and scope of this invention.