Title:
CERIUM OXIDE ABRASIVE, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, PROCESS FOR THE PRODUCTION OF THEM, AND METHOD FOR THE POLISHING OF SUBSTRATES
Document Type and Number:
WIPO Patent Application WO/1997/029510
Kind Code:
A1
Abstract:
An abrasive comprising an aqueous slurry of the following cerium oxide particles: (1) cerium oxide particles prepared by adding hydrogen peroxide to an aqueous dispersion of cerium carbonate, (2) cerium oxide particles prepared by adding ammonium hydrogencarbonate to an aqueous solution of cerium nitrate to form a precipitate and oxidizing this precipitate with hydrogen peroxide, and/or (3) cerium oxide particles prepared by neutralizing or alkalinizing an aqueous solution of ammonium cerium nitrate.
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Inventors:
MATSUZAWA JUN (JP)
KURATA YASUSHI (JP)
TANNO KIYOHITO (JP)
HONMA YOSHIO (JP)
KURATA YASUSHI (JP)
TANNO KIYOHITO (JP)
HONMA YOSHIO (JP)
Application Number:
PCT/JP1997/000326
Publication Date:
August 14, 1997
Filing Date:
February 07, 1997
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
MATSUZAWA JUN (JP)
KURATA YASUSHI (JP)
TANNO KIYOHITO (JP)
HONMA YOSHIO (JP)
MATSUZAWA JUN (JP)
KURATA YASUSHI (JP)
TANNO KIYOHITO (JP)
HONMA YOSHIO (JP)
International Classes:
C01F17/235; C09K3/14; (IPC1-7): H01L21/304; H01L21/321; C01F17/00; C09C1/68; C09K3/14; B24D3/12
Foreign References:
| JPH05326469A | 1993-12-10 | |||
| JPH0455315A | 1992-02-24 | |||
| JPH0672711A | 1994-03-15 |
Other References:
See also references of EP 0820092A4
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