CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit and priority of U.S. Patent Application No. 63/307,495, filed February 7, 2022, entitled “CHAMBER IONIZER FOR REDUCING ELECTROSTATIC DISCHARGE”, which is hereby incorporated by reference in its entirety.

TECHNICAL FIELD

[0002] The present technology relates to components and apparatuses for glass substrate and semiconductor substrate manufacturing. More specifically, the present technology relates to vacuum chamber components that reduce electrostatic discharge.

BACKGROUND

[0003] Liquid crystal displays or flat panels are commonly used for active matrix displays, such as computer, television, and other monitors. Plasma enhanced chemical vapor deposition (PECVD) is used to deposit thin films on a substrate, such as a semiconductor wafer or a transparent substrate for a flat panel display. PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing a substrate. The precursor gas or gas mixture is typically directed downwardly through a distribution plate situated near the top of the processing chamber. The precursor gas or gas mixture in the processing chamber is energized (e.g., excited) into a plasma by applying a power, such as a radio frequency (RF) power, to an electrode in the processing chamber from one or more power sources coupled to the electrode.

The excited gas or gas mixture reacts to form a layer of material on a surface of the substrate. The layer may be, for example, a passivation layer, a gate insulator, a buffer layer, and/or an etch stop layer. The layer may be a part of a larger structure, such as a thin film transistor (TFT) or an active matrix organic light emitting diodes (AMOLED) used in a display device. Between depositions, the substrate may be moved between various chambers in a system, such as by a robotic arm.

[0004] Flat panels processed by PECVD techniques are typically large and delicate. For example, the flat panel may exceed 4 square meters. Before and between processing operations, the robotic arm may periodically pick up and transfer the substrate to different stations of a processing system. Interactions between the substrate and various transfer and chamber components may generate positive charges and negative charges. The different charges may lead to electrostatic discharge. Such electrostatic discharge may cause various problems that may reduce the substrate quality. [0005] Thus, there is a need for improved systems and methods for reducing charges that lead to electrostatic discharge during substrate transfer operations. These and other needs are addressed by the present technology.

SUMMARY

[0006] Exemplary substrate processing systems may include a chamber including a body having one or more sidewalls. The one or more sidewalls may define an opening. The body may define an interior region. A plurality of substrate support pins may be disposed within the interior region. A plurality of ionizers may be coupled to one or more of the sidewalls of the body. Light sources of each of the plurality of ionizers may be oriented toward the opening defined in the one or more sidewalls.

[0007] In some embodiments, the one or more sidewalls may define a plurality of viewports. The plurality of ionizers may be coupled to the body via the plurality of viewports. Radiation fields emitted by the light sources of each of the plurality of ionizers may overlap. Each of the plurality of ionizers may be coupled to the body such that longitudinal axes of the respective light sources are at an angle of between about 40’ and about 70’ relative to a longitudinal axis extending through the opening and bisecting the body. Radiation fields generated by the light sources of each of the plurality of ionizers may collectively cover an entire width of the opening of the chamber. The plurality of ionizers may produce positive and negative ions without the presence of air. The plurality of ionizers may be or include vacuum ultraviolet ionizers. Substrate processing systems may include a plurality of chambers and a robotic arm connecting the plurality of chambers. Each of the plurality of ionizers may include a body having a chamber opening, a viewport opening, and an ionizer opening. A plane may extending through an entirety of the ionizer opening may be angled relative to a plane extending through an entirety of the chamber opening. The light source of the respective ionizer may be coupled with the ionizer opening.

[0008] Some embodiments of the present technology may encompass chamber ionizers. Exemplary chamber ionizers may include a body having a chamber opening, a viewport opening, and an ionizer opening. A plane extending through an entirety of the ionizer opening may be angled relative to a plane extending through an entirety of the chamber opening. An ionizer housing including a light source may be coupled with the ionizer opening. A longitudinal axis of the light source may be aligned with the ionizer opening. The light source may be oriented toward the chamber opening of the body.

[0009] In some embodiments, the body may include a flange proximate the chamber opening. The flange may define a plurality of apertures that are coupleable to a chamber for transferring a substrate. The ionizer housing may be coupled to the body such that the longitudinal axis of the light source is at an angle of between about 40" and about 70° relative to a plane that extends through an entirety the viewport opening. The chamber opening and the viewport opening may be substantially the same shape. The light source may be a vacuum ultraviolet light ionizer. The chamber opening may be defined on a first plane of the body. The viewport opening may be defined on a second plane of the body. The first plane and the second plane may be substantially parallel.

[0010] Some embodiments of the present technology may encompass substrate transfer methods. The methods may include engaging a substrate using a robotic arm. The methods may include moving the substrate to a chamber via an opening in one or more sidewalls of a body of the chamber. The body may define an interior region. The methods may include directing vacuum ultraviolet light toward the opening in one of the sidewalls of the body of the chamber to form positive and negative ions that react with charged material on the substrate as the substrate is moved into the chamber. The vacuum ultraviolet light may neutralize charge buildup on the substrate. The methods may include positioning the substrate on a plurality of substrate support pins disposed within the interior region. The methods may include disengaging the robotic arm from the substrate. The ultraviolet light may reduce electrostatic discharge while disengaging the robotic arm.

[0011] In some embodiments, the vacuum ultraviolet light may be directed toward the opening of the body without any flow of air. The vacuum ultraviolet light may reduce electrostatic discharge on the substrate, the chamber, the robotic arm, the plurality of substrate support pins, or combinations of these. The vacuum ultraviolet light may extend an entire width, above an upper surface, and below a lower surface of the substrate as the substrate is moved into the chamber.

[0012] Such technology may provide numerous benefits over conventional systems and techniques. For example, embodiments of the present technology may utilize a plurality of ionizers that may reduce positive and negative charge buildup on the substrate, chamber components, and/or transfer components before, during, and/or after processing. For example, embodiments may use ionizers that may generate that may combine with electrostatic charges on the substrate to neutralize such charges. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the below description and attached figures. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings.

[0014] FIG. 1 shows a top plan view of an exemplary processing system according to some embodiments of the present technology.

[0015] FIG. 2A shows a schematic side elevation view of an exemplary processing system according to some embodiments of the present technology.

[0016] FIG. 2B shows a top plan view of the processing system of FIG. 2A.

[0017] FIG. 2C shows a partial cross-sectional side view of the processing system of FIG. 2A.

[0018] FIG. 3A shows a front plan view of an exemplary chamber ionizer according to some embodiments of the present technology.

[0019] FIG. 3B shows an isometric view of the chamber ionizer of FIG. 3A.

[0020] FIG. 4 shows operations of an exemplary method of substrate transfer according to some embodiments of the present technology.

[0021] Several of the figures are included as schematics. It is to be understood that the figures are for illustrative purposes, and are not to be considered of scale unless specifically stated to be of scale. Additionally, as schematics, the figures are provided to aid comprehension and may not include all aspects or information compared to realistic representations, and may include exaggerated material for illustrative purposes.

[0022] In the appended figures, similar components and/or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a letter that distinguishes among the similar components. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the letter.

DETAILED DESCRIPTION

[0023] During and/or between processing operations, electrostatic charges may be generated, such as during transfer of the substrate between the transfer components and chamber components, that may accumulate on chamber components, transfer components, and/or substrates. For example, positive charges may accumulate on surfaces of the substrate and negative charges may accumulate on chamber and/or transfer components. When a component or substrate with positive charges contacts a component or substrate with negative charges, electrostatic discharge may occur. Electrostatic discharge may be unavoidable due to the presence of the positive and negative charges that may form during and/or before processing and/or transfer operations. The electrostatic discharge may result in the formation of defects on the substrate and/or in final devices.

[0024] The present technology overcomes these challenges by utilizing ionizers that reduce or eliminate the presence of charges on substrates during and/or before processing, particularly during transfer operations. For example, the ionizers may enable charges to be neutralized prior to electrostatic discharge occurring. The ionizers may remove electrons from some or all atoms and/or molecules (such as from gases) that are proximate the substrate thereby forming positive ions. Some or all of the ejected electrons may combine with stable atoms and/or molecules to form negative ions. The resultant positive and negative ions (or ejected electrons themselves) may accumulate and combine with electrostatic charges that have formed on chamber components, transfer components, and/or substrates to neutralize the electrostatic charges. The neutralization of electrostatic charges on chamber components, transfer components, and/or the substrate may reduce the potential for electrostatic discharge. The reduction in electrostatic discharge may reduce the possibility of the formation of defects on the substrate and/or in final devices. Further, the ionizers may operate without the introduction of gas (e.g., in a vacuum environment), which may avoid a risk of contamination of the substrate during transfer operations. Accordingly, the present technology may reduce electrostatic charges and, therefore, electrostatic discharge which may improve the quality of the processed substrate.

[0025] Although the remaining disclosure will routinely identify specific deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers, as well as processes that may occur in the described chambers. Accordingly, the technology should not be considered to be so limited as for use with these specific deposition processes or chambers alone. The disclosure will discuss one possible system and chamber that may include lid stack components according to embodiments of the present technology before additional variations and adjustments to this system according to embodiments of the present technology are described.

[0026] FIG. 1 shows a top plan view of a processing system 150. The processing system 150 may be suitable for processing large area substrates (e.g., substrates having a plan area greater than about 4 square meters). For example, the processing system 150 may be used to process one or more substrates including semiconductor substrates, flat panel display substrates, and/or solar panel substrates, among others. The processing system 150 may include a transfer chamber 108 coupled to a factory interface 112 by a load lock chamber 100 having a plurality of single substrate transfer chambers. For example, load lock chamber 100 may include two or more vertically- stacked substrate transfer chambers. The sidewalls of each substrate transfer chamber may include at least one port disposed therethrough to facilitate controlling the pressure within the interior volume of each chamber. For example, each transfer chamber may include a vent port and a vacuum port (not shown) that are formed in one or more of the sidewalls for venting gases and pumping down pressure within the respective transfer chamber. Valves (not shown) may be coupled to the vent port and/or vacuum port to selectively prevent flow therethrough. The vacuum port may be coupled to a vacuum pump (not shown) that is utilized to selectively lower the pressure within the interior volume of the first substrate transfer chamber to a level that substantially matches the pressure of the transfer chamber 108. The transfer chamber 108 may include at least one robotic arm 134, such as a dual blade vacuum robotic arm. The at least one robotic arm 134 may transfer substrates between the load lock chamber 100 and a plurality of circumscribing process chambers 132. While shown with five processing chambers and a single load lock chamber 100 (or single location with vertically stacked load lock chambers), it will be appreciated that any number of processing chambers 132 and load lock chambers 100 may be positioned about a transfer chamber 108 in various embodiments. The processing chambers 132 may include one or more system components for depositing, annealing, curing and/or etching film on the substrate and/or otherwise processing the substrate. In one configuration, some of the processing chambers 132 may be used to deposit material on the substrate, while the remaining processing chambers 132 may be used to etch the deposited material. In another configuration, all the processing chambers, 132 may be configured to deposit stacks of alternating layers of materials on the substrate. Any one or more of the processes described may be carried out in chambers separated from the fabrication system shown in different embodiments. It will be appreciated that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by processing system 150.

[0027] In another configuration, one of the process chambers 132 may be a pre-heat chamber. The pre-heat chamber may thermally condition substrates prior to processing to enhance throughput of the processing system 150. Typically, the transfer chamber 108 may be maintained at vacuum conditions to eliminate the necessity of adjusting the pressures between the transfer chamber 108 and the individual process chambers 132 after each substrate transfer.

[0028] The factory interface 112 may generally include a plurality of substrate storage cassettes 138 and a dual blade atmospheric robot 136. The cassettes 138 may generally be removably disposed in a plurality of bays 140 formed on one side of the factory interface 112. The atmospheric robotic arm 136 may be adapted to transfer substrates 110 between the cassettes 138 and the load lock chamber 100. Typically, the factory interface 112 may be maintained at or slightly above atmospheric pressure.

[0029] FIG. 2A shows a schematic side view of an exemplary processing system 200 according to some embodiments of the present technology. Processing system 200 may include one or more chambers 201 that may each be similar to chamber 100. For example, each chamber 201 may be a load lock chamber, however the chamber may be other types of vacuum chambers in various embodiments. Chamber 201 may include any of the features described in relation to chamber 100. Chamber 201 may include a body 203. The body 203 may have one or more sidewalls 202. For example, the chamber 201 may be circular and have one sidewall 202 or the chamber 201 may be polygonal and have multiple sidewalls 202. Each sidewall 202 may be generally linear and/or may include one or more curved portions. As illustrated, the body 203 may generally be rectangular and includes four generally straight sidewalls 202.

[0030] FIG. 2B shows a top plan view of the exemplary processing system 200. As shown in FIG. 2B, at least one of the sidewalls 202 may define one or more openings 208 that enable substrates to be transferred in and out of the chamber 201. For example, in some embodiments, the chamber 201 may include two openings at opposite sides of the chamber 201. In embodiments where chamber 201 is a load lock chamber, the one or more openings 208 may enable a substrate to be transferred between the chamber 201 and a factory interface, such as factory interface 112, and/or between the chamber 201 and a transfer chamber, such as transfer chamber 108. While illustrated with opening 208 extending through a single sidewall 202, it will be appreciated that each opening 208 may extend through multiple sidewalls in some embodiments. Each opening 208 may allow for a substrate to be passed via a robotic arm 270, which may be the same as robotic arm 134 or 136, into and out of the chamber 201. The body 203 may define an interior region in which a substrate may be positioned during transfer or for various processing operations. For example, the interior region may include some or all of the volume defined between the sidewalls 202, a top 204 of the body 203 (which may be formed from one or more lid stack components), and a bottom 206 of the body 203. While discussed as the chamber body 203 having a top, bottom, and sidewalls, it will be appreciated that the chamber may be oriented in different configurations in some embodiments and that the directions references describe the orientation of the chambers shown in the figures. The robotic arm 270 may pass the substrate through the opening 208 and into the interior region prior to one or more operations being performed on the substrate. As just one example when chamber 201 is a load lock chamber, the substrate may be passed into the interior region and supported atop one or more supports, such as support pins, while air is pumped out of the chamber 201 to selectively lower the pressure within the interior volume of the chamber 201 to a level that substantially matches the pressure of a transfer chamber, such as transfer chamber 108, which may be maintained in a vacuum environment in various embodiments. The robotic arm 270 may also pass the substrate out of the interior region and through the opening 208 after completion of the operation(s). Referring again to FIG. 2A, at least one sidewall 202 may also define one or more viewports 216. Each viewport 216 may enable users to visually inspect the interior region during operations. In some embodiments, a single viewport 216 may be provided on a given chamber, while in other embodiments multiple viewports 216 may be provided. As just one example, two or more viewports 216 may be provided on opposing sides of the chamber body 203. As illustrated in FIG. 2B, opposing sidewalls 202 that are adjacent the sidewall 202 defining the one or more openings 208 may each include a viewport 216. The viewports 216 may be aligned with one another, while in other embodiments, the viewports 216 may be offset from one another along a height and/or length of the chamber body 203. While two chambers 201 are shown, with one chamber 201 being stacked upon the other chamber 201, it is contemplated that the substrate processing system 200 may include any number of chambers 201, with one or more robotic arms 270 being used to transfer substrates to and from the various chambers 201.

[0031] FIG. 2C shows a partial cross-sectional view of the interior region of chamber 201 of exemplary processing system 200. As shown in FIG. 2C, a substrate support may be disposed within the interior region. The substrate support may be formed of and/or include a plurality of substrate support pins 238. For example, when the chamber 201 is a load lock chamber, the substrate support pins 238 may be fixed and may make up an entire substrate receiving surface. The substrate support pins 238 may receive the substrate 240 from one or more end effectors 272 of the robotic arm 270. The end effectors may be and/or include vacuums that grasp the substrate 240. As illustrated, the robotic arm 270 may engage the substrate 240 from a lower surface of the substrate 240. However, it is also contemplated that the robotic arm 270 may engage the substrate 240 from an upper surface and/or side surface of the substrate 240. During and/or after processing, as will be further described below, charge differences between chamber components ( such as the substrate support pins 238 and the robotic arm 270) and the substrate 240 may lead to electrostatic discharge on the substrate 240, chamber components, and/or transfer robot. One or more chamber ionizers, as further described below, may neutralize electrostatic charges on the chamber components and the substrate 240, thereby reducing electrostatic discharge.

[0032] Referring to FIGS. 2A and 2B, the substrate processing system 200 may include a number of ionizers 220. Each ionizer 220 may be coupled to one or more of the sidewalls 202 of the body 203. Each ionizer 220 may include a light source that emits a field of ionizing radiation, such as vacuum ultraviolet (VUV) radiation. Chamber 201 may include two ionizers, three, ionizers, four ionizers, five ionizers, or more. In some embodiments, the ionizers 220 may be coupled with sidewalls 202 on opposite sides of a longitudinal axis L of the chamber. Longitudinal axis L may extend through the opening 208 and may bisect the chamber body 203. As illustrated, the ionizers 220 may be coupled to the body 203 via the viewports 216 defined in and/or coupled with the sidewalls 202 of the body 203. For example, the ionizers 220 may be coupled with and/or interfaced with an outer surface of the viewport 216. It is contemplated that the ionizers 220 may be coupled to the body 203 via alternative locations. In some embodiments, the ionizers 220 may be coupled directly with the sidewalls 202, rather than being coupled with the sidewalls 202 via the viewports 216 or other components. In order to reduce electrostatic discharge, the ionizers 220, and in particular, light sources of the ionizers 220, may be oriented toward one of the one or more openings 208 defined in the one or more sidewalls 202. In embodiments, the plurality of ionizers 220 may be or include VUV ionizers.

[0033] The ionizers 220 may emit a radiation field 224, or ion field, via the respective light source of each ionizer 220. The radiation fields 224 may be any shape, such as conical. The ionizers 220 may be oriented to provide a radiation field 224 that completely covers a substrate as the substrate is passed through the opening 208 and into the interior region. That is, radiation fields 224 emitted by the light sources of the ionizers 220 may, collectively and/or individually, cover an entire width of the respective opening 208 of the chamber 201. The radiation fields 224 may be 3-dimensional, and may expand outward as a distance from the ionizer 220 increases. For example, the expansion of the radiation fields 224 may be uniform so as to form a conical field. The expansion of the radiation fields 224 may enable the radiation fields 224 to extend above an upper surface and/or below a lower surface of a substrate. By completely covering a substrate, electrostatic discharge across the entire substrate may be reduced or eliminated. For example, the radiation fields 224 may be able to generate positive and negative ions on all sides of the substrate 240 that may neutralize electrostatic charges on all surfaces of the substrate 240 and/or on other transfer components proximate and/or in contact with the substrate 240. Additionally, electrostatic buildup on chamber and/or transfer components that contact or are otherwise proximate to the substrate may be dissipated.

[0034] The ionizers 220 may be generally parallel to the top and/or bottom of the chamber body 203 in some embodiments. For example, the ionizers may be generally level (e.g., within or about 30 degrees of horizontal (or other direction parallel with the top and/or bottom of the chamber)), within or about 20 degrees of horizontal, within or about 15 degrees of horizontal, within or about 10 degrees of horizontal, within or about 5 degrees of horizontal, within or about 3 degrees of horizontal, within or about 1 degree of horizontal, or less. In some embodiments, each ionizer may be horizontally aligned with the opening 208 (such as a top, bottom, or center of opening 208). For example, the ionizers 220 may be substantially aligned with a transfer height of the substrate 240 such that the radiation field(s) 224 above and below the substrate 240 are substantially uniform.

[0035] The plurality of ionizers 220 may be arranged at the same height and/or distance from the opening 208. Additionally or alternatively, the plurality of ionizers 220 may be arranged symmetrically about the opening 208. For example, in embodiments having two ionizers 220, the two ionizers 220 may be arranged at the same height and/or distance from the opening 208 in the sidewalls 202. When arranged at the same height and distance, as well as the same angle as described below, the plurality of ionizers 220 may be equidistant from the opening 208. The equidistant arrangement may provide a uniform ion field directed toward the opening 208. A uniform ion field may ensure that electrostatic charges (e.g., on the substrate 240, chamber components, transfer components, etc.) may be neutralized as the substrate 240 passes through the radiation field(s) 224.

[0036] In embodiments, the plurality of ionizers 220 may be coupled to the body 203 such that longitudinal axes A of the light sources are laterally offset from the longitudinal axis L of the chamber by an angle of between about 40° and about 70°. For example, the plurality of ionizers 220 may be coupled to the sidewalls 202 of the body 203 such that longitudinal axes A of the light sources are at an angle of between about 45° and about 70°, between about 55° and about 70°, between about 60° and about 70°, between about 65° and about 70°, between about 40° and about 65°, between about 40° and about 60°, between about 40° and about 55°, between about 40° and about 50°, or between about 40° and about 45° relative to the longitudinal axis L. At angles between 40° and about 70°, the radiation field 224 may cover an entire width of the substrate 240 and/or opening 208, which may reduce or eliminate electrostatic discharge across all locations of the substrate 240 and/or chamber/transfer components. It is contemplated that other angle ranges may be used depending on the location of the ionizers 220.

[0037] The plurality of ionizers 220 may produce positive ions and negative ions. The positive and negative ions may combine with electrostatic charges on the chamber 201, transfer apparatus, and/or on the substrate to neutralize the electrostatic charges. The ionizers 220 may be configured to operate within the vacuum environment within the chambers. For example, in embodiments, the plurality of ionizers 220 produce positive and negative ions without the introduction of air or other gases (e.g., in the vacuum environment within the chamber). However, it is contemplated that the plurality of ionizers 220 may produce positive and negative ions with the presence of another gas in some embodiments.

[0038] While illustrated with the ionizers 220 being coupled with the sidewalls 202 of the chamber, it will be appreciated that the ionizers may be positioned at other locations of the body 203, such as on or proximate the bottom or top of the chamber body 203 in some embodiments.

[0039] FIGS. 3A-3B show a front plan view and an isometric view, respectively, of an exemplary chamber ionizer 300 according to some embodiments of the present technology. Chamber ionizer 300 may be similar to chamber ionizer 220 and may include any of the features described in relation to chamber ionizer 220.

[0040] The chamber ionizer 300 may include and/or be affixed to a body 301. The body 301 of the chamber ionizer 300 may have any shape, including oval, circular, rectangular, polygonal, or any other shape. The body 301 may define a chamber opening 302, a viewport opening 304, and an ionizer opening 306. The chamber opening 302 may be aligned with a corresponding opening in the sidewall of the chamber to provide visual access to the interior of the chamber. The chamber opening 302 may be on an opposite side of the body 301 from the viewport opening 304. An interior of the body 301 may be generally open, such that a user may view the interior of the chamber through the viewport opening 304. To seal the viewport opening 304, a transparent, non- reactive panel, such as a polycarbonate panel, may be interfaced with the viewport opening 304. As illustrated, the chamber opening 302 and the viewport opening 304 may be on sides of the body 301 that are substantially parallel to one another and/or to the adjacent sidewall of the chamber. In embodiments, the chamber ionizer 300 may be mounted on the viewport of a chamber, such as viewport 216 of chamber 201. Therefore, a viewport opening 304 on the chamber ionizer 300 (such as defined through one of the sidewalls of the chamber) may allow for continued functionality of the viewport while simultaneously serving as a mounting location for the chamber ionizer 300.

[0041] The chamber opening 302 and the viewport opening 304 may be substantially the same shape. For example, as illustrated, the chamber opening 302 and the viewport opening 304 each have generally rectangular shapes. It is contemplated that the chamber opening 302 and the viewport opening 304 may also be different shapes. The chamber opening 302 and/or the viewport opening 304 may have any shape, including oval, circular, rectangular, polygonal, or any other shape. In embodiments, the sides of the body 301 defining the chamber opening 302 and the viewport opening 304 may be substantially the same shape and the openings may be the same shape as the sides. However, it is contemplated that the viewport opening 304 may be smaller than the chamber opening 302 to accommodate the ionizer opening 306.

[0042] The body 301 may include a flange 308 proximate the chamber opening 302. The flange 308 may extend radially outward from the chamber opening 302. The flange 308 may extend continuously about the entire periphery of the chamber opening 302, or may be discontinuous, such as by being formed of a series of segments separated by gaps. The flange 308 may define a plurality of apertures 310. The plurality of apertures 310 may be used to couple the chamber ionizer 300 to a chamber for processing a substrate. For example, a number of fasteners, such as screws, rivets, and/or bolts, may extend through the openings to secure the chamber ionizer 300 to the sidewalls of the chamber.

[0043] A plane Pi may extend through and be coextensive with the chamber opening 302. That is, the chamber opening 302 may be defined on the plane Pi, which may be a first plane. A plane P2 may extend through and be coextensive with the viewport opening 304. That is, the viewport opening may be defined on the plane P2, which may be a second plane of the body 301. A plane P3 may extend through and be coextensive with the ionizer opening 306. The planes extending through the chamber opening 302, the viewport opening 304, and the ionizer opening 306 may be vertical planes. That is, the planes may extend through the entirety of the chamber opening 302, the viewport opening 304, and the ionizer opening 306, respectively. The plane Pi extending through the chamber opening 302, or the first plane, and the plane P2 extending through the viewport opening 304, or the second plane, may be substantially parallel. The plane P3 extending through the ionizer opening 306 may be angled relative to the plane Pi extending through the chamber opening 302 and/or the plane P2 extending through the viewport opening 304.

[0044] Ionizer 300 may include an ionizer housing 322 that includes a light source that may extend along a longitudinal axis A of the ionizer housing 322 and may be coupled with and/or otherwise oriented toward the ionizer opening 306. For example, the light source may be contained within the ionizer housing 322 and may direct ionizing light into a chamber via the ionizer opening 306. The light source may be a VUV source. The longitudinal axis A of the ionizer housing 322 (and subsequently the light source) may be aligned with the ionizer opening 306. The light source of the ionizer 300 may be oriented toward the chamber opening 302 of the body 301. As the plane P3 extending through the ionizer opening 306 is angled relative to the plane Pi extending through the chamber opening 302 and/or the viewport opening 304, the longitudinal axis A of the light source may be angled relative to the plane Pi extending through the chamber opening 302 and/or viewport opening 304. The configuration of the light source of the ionizer 300 being angled may allow for the ionizer 300, when coupled to a chamber, to emit a radiation field from the light source.

[0045] In some embodiments, the radiation field may be sufficiently wide so as to extend about a full width of the opening in the sidewall of the chamber used to pass a substrate into and/or out of the chamber. In other embodiments, the chamber may include multiple ionizers 300 that are positioned (such as on opposing sidewalls of the chamber) to emit radiation fields that collectively span the entire width of the respective opening of the chamber. As previously discussed, the ionizer housing 322 may be coupled to the body 301 such that the longitudinal axis A of the ionizer housing 322 and light source may be at an angle of between about 40" and about 70° relative to the plane Pi extending through the chamber opening 302. Here, the angle may be measured relative to the plane Pi that extends through the chamber opening 302. Again, the plane Pi that extends through the chamber opening 302 may be a vertical plane.

[0046] In embodiments, the ionizer housing 322 may include a flange 324 that may be used to couple the ionizer housing 322 to the body 301. The flange 324 may extend radially outward from the light source of the ionizer 300. The flange 324 may define a plurality of apertures 326. The plurality of apertures 326 may be used to couple the ionizer housing 322 to the body 301 of the chamber ionizer 300. For example, a number of fasteners, such as screws, rivets, and/or bolts, may extend through the apertures 326 to secure the ionizer housing 322 to the body 301 of the chamber ionizer 300. The flange 324 of the ionizer housing 322, when coupled to the body 301 of the chamber ionizer 300, may be angled relative to the flange 308 proximate the chamber opening 302 such that the light source of the ionizer is directed generally in the direction of a transfer opening of the chamber. In embodiments, the flange 324 may have a consistent thickness such that the longitudinal axis A of the light source may remain at least substantially perpendicular to the outer boundary of the ionizer opening 306 (e.g., plane Pi). which may ensure that the longitudinal axis A of the light source is angled relative to the plane Pi.

[0047] FIG. 4 illustrates operations of an exemplary method 400 of substrate processing according to some embodiments of the present technology. The method may be performed in a variety of processing chambers, including chamber 100 and 201 described above, which may include chamber ionizers according to embodiments of the present technology, such as chamber ionizers 220 or 300. Method 400 may include a number of optional operations, which may or may not be specifically associated with some embodiments of methods according to the present technology. [0048] Method 400 may include a processing method that may include operations for transferring a substrate between chambers, such as between various deposition operations. The method may include optional operations prior to initiation of method 400, or the method may include additional operations during or subsequent of method 400. For example, method 400 may include operations performed in different orders than illustrated.

[0049] Method 400 may include engaging a substrate using a robotic arm at operation 405. For example, the substrate may be engaged using robotic arm 134, 136, or 270. One or more end effectors of the robotic arm may interface with the substrate and engage the substrate.

[0050] At operation 410, the method 400 may include moving the substrate to a chamber via an opening in a body of the chamber. For example, the robotic arm may transfer a substrate from a factory interface (such as factory interface 112) to a load lock chamber. The robotic arm may deliver the substrate to a substrate support surface (such as substrate support pins) disposed within an interior region of the chamber. As previously discussed, the body may define an interior region. At operation 415, the method 400 may include directing VUV light toward the opening in one of the sidewalls of the body of the chamber to form positive and negative ions that react with charged material on the substrate as the substrate is moved into the chamber. The VUV light may emitted as an ion field from a plurality of ionizers. The VUV light may neutralize charge buildup on the substrate. The VUV light may also neutralize any charge buildup on any components or surfaces in the chamber that may occur as the substrate is delivered to and/or removed from the chamber, and in particular as the substrate is exchanged from the robotic arm to the substrate support surface and/or substrate support pins. Other components, such as the substrate support pins, may become charged and may be charged opposite from the substrate. Accordingly, when the substrate is set on the substrate support pins, electrostatic discharge may occur and may cause defects in the substrate if not sufficiently neutralized.

[0051] In embodiments, the VUV light may be directed toward the opening of the body without any introduced flow of air. For example, the chamber may be a load lock chamber that provides an environment that transitions between an ambient pressure (such as at a factory interface) and a vacuum and/or other low pressure environment (such as at a transfer chamber interface). That is, the VUV light may form positive ions and negative ions from low levels of air, gas, and/or other constituents already present in the chamber and may not introduce additional material to the chamber. By directing VUV light without any flow of air (e.g., in the vacuum environment within the chamber), any risk of contamination of the substrate may be eliminated or reduced while electrostatic charge on the substrate and nearby transfer and/or chamber components may be reduced or eliminated. The VUV light may extend an entire width, above an upper surface, and below a lower surface of the substrate as the substrate is moved into the chamber. For example, the VUV light may be emitted in a 3-dimensional manner (such as a conical shape) that extends above and/or below the substrate. That is, an ion field emitted toward the substrate may be uniform across an entirety of the substrate. The uniform ion field may be due to the arrangement of the plurality of ionizers as previously discussed. By covering the entire width and entire height of the substrate, electrostatic charges along the entire substrate (and transfer/ chamber components contacting and/or otherwise proximate the substrate) may be reduced.

[0052] Directing VUV light toward the opening in one of the sidewalls of the body of the chamber may reduce or neutralize electrostatic charges via photoionization. The VUV light may be directed from a light source of an ionizer, such as the light source of ionizer 220 or 300. The VUV light may radiate onto atoms proximate the substrate as the substrate is moved into the chamber. The VUV light may cause electrons to be ejected from the molecules to generate positive ions and electrons. Ejected electrons may combine with uncharged molecules to form negative ions. The positive ions and negative ions may be continuously generated in the VUV radiated area, or the area where the VUV light is being emitted. The positive and negative ions may combine with electrostatic charges on the substrate to reduce or neutralize the electrostatic charges. Any excess positive ions or negative ions may recombine and return to their original uncharged state. Similar to the substrate, other areas that may be charged, including the chamber, the robotic arm, the plurality of substrate support pins, or combinations of these, may be neutralized.

[0053] At operation 420, the method 400 may include positioning the substrate on a plurality of substrate support pins disposed within the interior region. If VUV light is not directed toward the opening in one of the sidewalls of the body of the chamber as the substrate is moved into the chamber, electrostatic discharge may occur when the substrate support pins and the substrate are touching or near one another. As previously discussed, the electrostatic discharge may result in the formation of defects on the substrate and/or in final devices. At operation 425, the method 400 may include disengaging the robotic arm from the substrate. After the robotic arm is disengaged from the substrate, the robot arm may be removed from the chamber to allow for further processing of the substrate to occur.

[0054] After charges on the substrate have been neutralized, the substrate may be transferred to one or more processing chambers where one or more processes may be performed on the substrate. For example, one or more processing operations such as, but not limited to, PECVD, atomic layer deposition, physical vapor deposition, etch, pre-clean, degas, orientation, and other substrate processes including, annealing, and/or ashing may be performed on the substrate.

[0055] In the preceding description, for the purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. It will be apparent to one skilled in the art, however, that certain embodiments may be practiced without some of these details, or with additional details.

[0056] Having disclosed several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, a number of well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the above description should not be taken as limiting the scope of the technology.

[0057] Where a range of values is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Any narrower range between any stated values or unstated intervening values in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of those smaller ranges may independently be included or excluded in the range, and each range where either, neither, or both limits are included in the smaller ranges is also encompassed within the technology, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0058] As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include plural references unless the context clearly dictates otherwise. Thus, for example, reference to “a chamber” includes a plurality of such chambers, and reference to “the opening” includes reference to one or more openings and equivalents thereof known to those skilled in the art, and so forth.

[0059] Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)”, and “including”, when used in this specification and in the following claims, are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.