Title:
CHARGE DETECTION SENSOR AND POTENTIAL MEASUREMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2019/058815
Kind Code:
A1
Abstract:
Disclosed is a charge detection sensor wherein noise is reduced and sensitivity is improved by reducing parasitic capacitance. The charge detection sensor is provided with a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate, and detects charges. The detection electrode is provided on the other surface of the semiconductor substrate, said the other surface being different from the one surface. The contact electrically connects the detection electrode and the detection element to each other by penetrating the semiconductor substrate. Since a wiring layer is not formed between the detection element and the detection electrode, parasitic capacitance is reduced.
Inventors:
OGI JUN (JP)
KATO YURI (JP)
KIMIZUKA NAOHIKO (JP)
MATOBA YOSHIHISA (JP)
SHIMIZU KAN (JP)
KATO YURI (JP)
KIMIZUKA NAOHIKO (JP)
MATOBA YOSHIHISA (JP)
SHIMIZU KAN (JP)
Application Number:
PCT/JP2018/030255
Publication Date:
March 28, 2019
Filing Date:
August 14, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
G01R29/24; G01N27/414; G01N27/416
Domestic Patent References:
| WO2012165016A1 | 2012-12-06 |
Foreign References:
| JPH08313479A | 1996-11-29 | |||
| JP2016038384A | 2016-03-22 | |||
| JP2012080873A | 2012-04-26 | |||
| JP2012009820A | 2012-01-12 | |||
| JP2004132981A | 2004-04-30 | |||
| JP2009524046A | 2009-06-25 | |||
| JP2013533482A | 2013-08-22 | |||
| JP2016080370A | 2016-05-16 | |||
| JP2015206803A | 2015-11-19 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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