Title:
CHARGE MODULATION ELEMENT AND SOLID STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/112047
Kind Code:
A1
Abstract:
Provided are: a p-type photoelectric conversion layer (11); an n-type surface embedded region (13) embedded in the top part of the photoelectric conversion layer (11); an n-type modulation region (14) embedded on the top surface side of the photoelectric conversion layer (11), the n-type modulation region (14) constituting part of a photodiode together with the photoelectric conversion layer (11); p-type potential control regions (15a, 15c) that, when the modulation region (14) is divided into a plurality of regions, are respectively placed in each divided region; and n-type charge storage regions (17a, 17c) for which signal charges generated by the photodiode are transferred along mutually independent transport routes, and temporarily stored in respective fashion. Using route selection signals, which are pulse voltages applied to the potential control regions (15a, 15c), the potential of the modulation region (14) and the surface embedded region (13) is controlled and the transport route is selected.
Inventors:
KAWAHITO SHOJI (JP)
Application Number:
PCT/JP2018/045119
Publication Date:
June 13, 2019
Filing Date:
December 07, 2018
Export Citation:
Assignee:
UNIV SHIZUOKA NAT UNIV CORP (JP)
International Classes:
H01L27/146; G01S7/481; H01L31/10; H04N5/374
Domestic Patent References:
| WO2007026779A1 | 2007-03-08 | |||
| WO2014021417A1 | 2014-02-06 | |||
| WO2011065286A1 | 2011-06-03 |
Foreign References:
| JP2002368205A | 2002-12-20 | |||
| JP2005235893A | 2005-09-02 | |||
| JP2010056345A | 2010-03-11 |
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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