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Patent Searching and Data


Title:
CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2012/005232
Kind Code:
A1
Abstract:
Disclosed is a technology that can remove a minimum but sufficient amount of a damaged layer of a sample piece generated during FIB processing. Specifically disclosed is a charged particle beam device comprising: a first element ion beam optical device (110) that performs a first FIB processing that forms a sample piece from a sample; a second element ion beam optical device (120) that performs a second FIB processing that removes the damaged layer that has been formed on the surface of the sample piece; and a first element detector (140) for detecting a first element that exists in the damaged layer. The end of the second FIB processing is determined when the amount of the first element that exists in the damaged layer becomes lower than a predetermined threshold amount.

Inventors:
NANRI Terutaka (HITACHI HIGH-TECHNOLOGIES CORPORATION 882, Oaza Ichige, Hitachinaka-sh, Ibaraki 04, 〒3128504, JP)
南里光栄 (〒04 茨城県ひたちなか市大字市毛882番地 株式会社日立ハイテクノロジーズ 那珂事業所内 Ibaraki, 〒3128504, JP)
ONISHI Tsuyoshi (HITACHI HIGH-TECHNOLOGIES CORPORATION 882, Oaza Ichige, Hitachinaka-sh, Ibaraki 04, 〒3128504, JP)
Application Number:
JP2011/065324
Publication Date:
January 12, 2012
Filing Date:
July 05, 2011
Export Citation:
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Assignee:
HITACHI HIGH-TECHNOLOGIES CORPORATION (24-14, Nishi Shimbashi 1-chome Minato-k, Tokyo 17, 〒1058717, JP)
株式会社日立ハイテクノロジーズ (〒17 東京都港区西新橋一丁目24番14号 Tokyo, 〒1058717, JP)
NANRI Terutaka (HITACHI HIGH-TECHNOLOGIES CORPORATION 882, Oaza Ichige, Hitachinaka-sh, Ibaraki 04, 〒3128504, JP)
南里光栄 (〒04 茨城県ひたちなか市大字市毛882番地 株式会社日立ハイテクノロジーズ 那珂事業所内 Ibaraki, 〒3128504, JP)
International Classes:
H01J37/317; G01N1/28
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (Kamiya-cho MT Bldg. 19F, 3-20 Toranomon 4-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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Claims: