Title:
CHARGED PARTICLE RADIATION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2014/141775
Kind Code:
A1
Abstract:
The present invention provides a high-throughput electron scanning microscope in which a wafer (9) is held by an electrostatic chuck (10), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer (9) is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (9). A drill hole is provided on the rear surface of the electrostatic chuck (10), and a thermometer (34) is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer (34) is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (34), and measuring begins at individual measurement sites after the measurement limit time has elapsed.
Inventors:
KANNO SEIICHIRO (JP)
FUJITA MASASHI (JP)
ISHIGAKI NAOYA (JP)
NISHIHARA MAKOTO (JP)
SHIMIZU KUMIKO (JP)
FUJITA MASASHI (JP)
ISHIGAKI NAOYA (JP)
NISHIHARA MAKOTO (JP)
SHIMIZU KUMIKO (JP)
Application Number:
PCT/JP2014/052613
Publication Date:
September 18, 2014
Filing Date:
February 05, 2014
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01J37/20; H01J37/28; H01L21/683
Foreign References:
| JP2009259444A | 2009-11-05 | |||
| JP2000091201A | 2000-03-31 | |||
| JP2002164399A | 2002-06-07 | |||
| JP2004172487A | 2004-06-17 | |||
| JP2013008987A | 2013-01-10 | |||
| JP2006066690A | 2006-03-09 | |||
| JPH0636997A | 1994-02-10 | |||
| JP2003188075A | 2003-07-04 |
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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