Title:
CHEM-MECHANICAL POLISHING LIQUID FOR BARRIER LAYER
Document Type and Number:
WIPO Patent Application WO/2018/120808
Kind Code:
A1
Abstract:
Provided is a chem-mechanical polishing liquid for planarization of a barrier layer, comprising abrasive particles, an azole compound, a complexing agent, a nonionic surfactant and an oxygenant, wherein the nonionic surfactant is a block polyether compound. The chem-mechanical polishing liquid has a high removal rate for barrier materials and dielectric materials, and a adjustable removal rate for low dielectric materials and copper under mild conditions, and can control well the generation of dish down, dielectric layer corrosion and metallic corrosion, and decrease surface pollutants, and the polished wafer is characterized by excellent morphology.
Inventors:
YAO YING (CN)
PAN YIJUN (CN)
JING JIANFEN (CN)
DU LINGXI (CN)
CAI XINYUAN (CN)
SONG KAI (CN)
YANG JUNYA (CN)
ZHANG JIAN (CN)
WANG CHUNMEI (CN)
WANG YUCHUN (CN)
PAN YIJUN (CN)
JING JIANFEN (CN)
DU LINGXI (CN)
CAI XINYUAN (CN)
SONG KAI (CN)
YANG JUNYA (CN)
ZHANG JIAN (CN)
WANG CHUNMEI (CN)
WANG YUCHUN (CN)
Application Number:
PCT/CN2017/094309
Publication Date:
July 05, 2018
Filing Date:
July 25, 2017
Export Citation:
Assignee:
ANJI MICROELECTRONICS TECH SHANGHAI CO LTD (CN)
International Classes:
C23F3/04; C09G1/02; C30B33/10; H01L21/306
Foreign References:
| CN104650738A | 2015-05-27 | |||
| CN104745090A | 2015-07-01 | |||
| CN101974297A | 2011-02-16 | |||
| CN101724346A | 2010-06-09 | |||
| CN104559797A | 2015-04-29 |
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
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