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Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/151145
Kind Code:
A1
Abstract:
Provided are: a chemical mechanical polishing composition which can polish a semiconductor substrate (particularly, a ruthenium film-containing substrate) at high speed and reduce polishing scratches on a surface to be polished while suppressing the generation of ruthenium tetraoxide which is highly toxic to the human body; and a polishing method by using said composition. This chemical mechanical polishing composition contains alumina-modified titanium oxide particles (A) and a poly(meth)acrylic acid (B), and has a pH of 7-13.

Inventors:
YAMADA, Yuuya (9-2 Higashi-shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
NODA, Masahiro (9-2 Higashi-shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
YAMANAKA, Tatsuya (9-2 Higashi-shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
ISHIMAKI, Kouki (9-2 Higashi-shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
Application Number:
JP2019/002527
Publication Date:
August 08, 2019
Filing Date:
January 25, 2019
Export Citation:
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Assignee:
JSR CORPORATION (9-2 Higashi-shinbashi 1-chome, Minato-ku Tokyo, 40, 〒1058640, JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
WO2013042596A12013-03-28
Foreign References:
JP2005523574A2005-08-04
JP2015063451A2015-04-09
JP2005518090A2005-06-16
JP2016196632A2016-11-24
JP2002526594A2002-08-20
Attorney, Agent or Firm:
OFUCHI, Michie et al. (8th Floor, Hirata Building 8-16, Kandasarugaku-cho 2-chome, Chiyoda-k, Tokyo 64, 〒1010064, JP)
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