Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/151145
Kind Code:
A1
Abstract:
Provided are: a chemical mechanical polishing composition which can polish a semiconductor substrate (particularly, a ruthenium film-containing substrate) at high speed and reduce polishing scratches on a surface to be polished while suppressing the generation of ruthenium tetraoxide which is highly toxic to the human body; and a polishing method by using said composition. This chemical mechanical polishing composition contains alumina-modified titanium oxide particles (A) and a poly(meth)acrylic acid (B), and has a pH of 7-13.
Inventors:
YAMADA YUUYA (JP)
NODA MASAHIRO (JP)
YAMANAKA TATSUYA (JP)
ISHIMAKI KOUKI (JP)
NODA MASAHIRO (JP)
YAMANAKA TATSUYA (JP)
ISHIMAKI KOUKI (JP)
Application Number:
PCT/JP2019/002527
Publication Date:
August 08, 2019
Filing Date:
January 25, 2019
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
B24B37/00; H01L21/304; C09K3/14
Domestic Patent References:
| WO2013042596A1 | 2013-03-28 |
Foreign References:
| JP2005523574A | 2005-08-04 | |||
| JP2015063451A | 2015-04-09 | |||
| JP2005518090A | 2005-06-16 | |||
| JP2016196632A | 2016-11-24 | |||
| JP2002526594A | 2002-08-20 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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