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Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/095413
Kind Code:
A1
Abstract:
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method with which a semiconductor substrate containing a conductive metal such as tungsten or cobalt can be flatly polished at high speed and surface defects after polishing can be reduced.　A chemical mechanical polishing composition according to the present invention contains: (A) silica particles having a functional group represented by formula (1); and (B) a compound having a hydroxyl group and an ether group.　-COO-M+... (1) (M+ represents a monovalent cation.)

Inventors:
YAMADA YUUYA (JP)
WANG PENGYU (JP)
SUGIE NORIHIKO (JP)
KAMEI YASUTAKA (JP)
Application Number:
PCT/JP2020/038477
Publication Date:
May 20, 2021
Filing Date:
October 12, 2020
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
B24B37/00; C09G1/02; C09K3/14; H01L21/304
Foreign References:
US20190211228A12019-07-11
JP2016141765A2016-08-08
JP2012040671A2012-03-01
JP2001269857A2001-10-02
JP2019169687A2019-10-03
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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