Title:
CHEMICAL MECHANICAL POLISHING COMPOSITIONS
Document Type and Number:
WIPO Patent Application WO2003040252
Kind Code:
A3
Abstract:
A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce a mechanical removal of the metal and dielectric material.
Inventors:
SMALL ROBERT J
MCGHEE LAURENCE
MALONEY DAVID J
PETERSON MARIA L
MCGHEE LAURENCE
MALONEY DAVID J
PETERSON MARIA L
Application Number:
PCT/US2002/035388
Publication Date:
October 09, 2003
Filing Date:
November 05, 2002
Export Citation:
Assignee:
ECK TECHNOLOGY INC (US)
International Classes:
C09G1/02; H01L21/302; H01L21/321; H01L21/461; (IPC1-7): C09G1/02; H01L21/302
Domestic Patent References:
| WO1998004646A1 | 1998-02-05 |
Foreign References:
| US3592773A | 1971-07-13 | |||
| US5575837A | 1996-11-19 |
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