Title:
CHEMICAL MECHANICAL POLISHING LIQUID FOR POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2008/122204
Kind Code:
A1
Abstract:
The present invention provides a chemical mechanical polishing liquid for polycrystalline
silicon, which contains polyol-type nonionic surfactant, guanidines compound,
abrasive particles and water. The polishing liquid of the invention can polish
polycrystalline silicon film better under basic conditions. Inter alia, the
polyol-type nonionic surfactant can reduce evidently the removal rate of polycrystalline
silicon without reducing the remove rate of silicon dioxide, thereby remarkably
decreasing the selectivity ratio of polycrystalline silicon to silicon dioxide.
Guanidines compound can be used to adjust the selectivity ratio of polycrystalline
silicon to silicon dioxide, and it simultaneously has a function of adjusting
pH. It allows the polishing liquid of the invention adding none of common pH regulator,
and reduces the contamination of metal ions and environmental pollution greatly.
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Inventors:
JING JUDY JIANFEN (CN)
YANG ANDY CHUNXIAO (CN)
YANG ANDY CHUNXIAO (CN)
Application Number:
PCT/CN2008/000683
Publication Date:
October 16, 2008
Filing Date:
April 03, 2008
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
JING JUDY JIANFEN (CN)
YANG ANDY CHUNXIAO (CN)
JING JUDY JIANFEN (CN)
YANG ANDY CHUNXIAO (CN)
International Classes:
C09G1/02; H01L21/302
Foreign References:
CN1609155A | 2005-04-27 | |||
CN1650403A | 2005-08-03 | |||
US20060293208A1 | 2006-12-28 | |||
CN1643660A | 2005-07-20 |
Attorney, Agent or Firm:
ZHENGHAN LAW FIRM (South Tower of Shanghai Stock Exchange BuildingNo.528 Pu Dong Road, Shanghai 0, CN)
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