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Title:
CHEMICAL MECHANICAL POLISHING LIQUID FOR POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2008/122204
Kind Code:
A1
Abstract:
The present invention provides a chemical mechanical polishing liquid for polycrystalline silicon, which contains polyol-type nonionic surfactant, guanidines compound, abrasive particles and water. The polishing liquid of the invention can polish polycrystalline silicon film better under basic conditions. Inter alia, the polyol-type nonionic surfactant can reduce evidently the removal rate of polycrystalline silicon without reducing the remove rate of silicon dioxide, thereby remarkably decreasing the selectivity ratio of polycrystalline silicon to silicon dioxide. Guanidines compound can be used to adjust the selectivity ratio of polycrystalline silicon to silicon dioxide, and it simultaneously has a function of adjusting pH. It allows the polishing liquid of the invention adding none of common pH regulator, and reduces the contamination of metal ions and environmental pollution greatly.

Inventors:
JING JUDY JIANFEN (CN)
YANG ANDY CHUNXIAO (CN)
Application Number:
PCT/CN2008/000683
Publication Date:
October 16, 2008
Filing Date:
April 03, 2008
Export Citation:
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Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
JING JUDY JIANFEN (CN)
YANG ANDY CHUNXIAO (CN)
International Classes:
C09G1/02; H01L21/302
Foreign References:
CN1609155A2005-04-27
CN1650403A2005-08-03
US20060293208A12006-12-28
CN1643660A2005-07-20
Attorney, Agent or Firm:
ZHENGHAN LAW FIRM (South Tower of Shanghai Stock Exchange BuildingNo.528 Pu Dong Road, Shanghai 0, CN)
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