CHEMICAL-MECHANICAL POLISHING LIQUID, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND POLISHING METHOD USING SAID POLISHING LIQUID

WIPO Patent Application WO/2011/058816

A1

Provided is a chemical-mechanical polishing liquid that contains: cerium oxide particles; an organic compound that has acetylenic bonds; and water. Said organic compound that has acetylenic bonds constitutes between 0.00001% and 0.01% of the mass of the entire chemical-mechanical polishing liquid. Also provided is a chemical-mechanical polishing liquid that contains: cerium oxide particles; an organic compound that has acetylenic bonds; either an anionic macromolecular compound obtained by polymerizing a composition that contains a monomer component which is a vinyl compound that has an anionic substituent, or a salt thereof; and water. Said organic compound that has acetylenic bonds constitutes at least 0.000001% and less than 0.05% of the mass of the entire chemical-mechanical polishing liquid.

YOSHIKAWA, Shigeru (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
吉川　茂 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
AKUTSU, Toshiaki (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)

JP2010/065863

May 19, 2011

September 14, 2010

Click for automatic bibliography generation  

HITACHI CHEMICAL COMPANY, LTD. (1-1 Nishi-Shinjuku 2-chome, Shinjuku-ku Tokyo, 49, 〒1630449, JP)
日立化成工業株式会社 (〒49 東京都新宿区西新宿二丁目１番１号 Tokyo, 〒1630449, JP)
YOSHIKAWA, Shigeru (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
吉川　茂 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)

H01L21/304; B24B37/04; C09K3/14

HASEGAWA, Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl.,1-1, Marunouchi 2-chom, Chiyoda-ku Tokyo 05, 〒1000005, JP)

View/Download PDF      PDF Help

Previous Patent: INTERNAL COMBUSTION ENGINE COOLING SYSTEM AND FAILURE DETERMINATION METHOD FOR INTERNAL COMBUSTION E...

Next Patent: EMERGENCY REACTOR CORE COOLING DEVICE AND NUCLEAR REACTOR FACILITY