Title:
A CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2010/012159
Kind Code:
A1
Abstract:
The present invention discloses a chemical-mechanical polishing liquid comprising collosol-type silicon dioxide, a rate accelerator, a surfactant and water. The present invention overcomes the disadvantages that the content of the abrasive in the polishing liquid and the quantity of the defects on the polished surface are both high in the existing chemical-mechanical polishing liquid for polishing oxides dielectric media. The present invention provides a chemical-mechanical polishing liquid having low content of abrasive, high remove-rate of silicon dioxide and low polishing rate of silicon nitride.
More Like This:
| WO/2019/144314 | METHOD FOR PREPARING NANOMETER SILICON SOL POLISHING SOLUTION |
| WO/2020/100848 | MULTI-CORE FERRULE POLISHING MATERIAL |
| WO/2011/072495 | CHEMICAL-MECHANICAL POLISHING LIQUID |
Inventors:
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
JING JUDY JIANFEN (CN)
SONG PETER WEIHONG (CN)
JING JUDY JIANFEN (CN)
Application Number:
PCT/CN2009/000863
Publication Date:
February 04, 2010
Filing Date:
August 03, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
JING JUDY JIANFEN (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
JING JUDY JIANFEN (CN)
International Classes:
C09G1/02; C09K3/14; H01L21/304
Foreign References:
| US20060196850A1 | 2006-09-07 | |||
| CN101077961A | 2007-11-28 | |||
| CN1648190A | 2005-08-03 | |||
| JP2003286477A | 2003-10-10 | |||
| CN1244033A | 2000-02-09 | |||
| CN101044600A | 2007-09-26 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (No.61 East Nanjing Road, Shanghai 2, CN)
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