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Title:
A CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2010/025623
Kind Code:
A1
Abstract:
The present invention discloses a chemical-mechanical polishing liquid comprising colloidal silicon dioxide particles, organic carboxylic acid and/or organic phosphonic acid, potassium nitrate and water. To satisfy the demand of a chemical-mechanical polishing liquid for polishing oxide dielectric materials, the present invention provides a chemical-mechanical polishing liquid having high removal rate of oxide dielectric materials.

Inventors:
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
Application Number:
PCT/CN2009/001000
Publication Date:
March 11, 2010
Filing Date:
September 04, 2009
Export Citation:
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Assignee:
ANJI MICROELECTRONICS TECHNOLO (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
International Classes:
C09G1/02
Domestic Patent References:
WO1999067056A11999-12-29
Foreign References:
CN101130665A2008-02-27
CN1860592A2006-11-08
CN1609156A2005-04-27
CN1459480A2003-12-03
CN1720313A2006-01-11
US20060084271A12006-04-20
Attorney, Agent or Firm:
HANHONG LAW FIRM (New Huangopu Financial BuildingNo. 61, East Nanjing Road, Shanghai 2, CN)
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