Title:
CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2019/129105
Kind Code:
A1
Abstract:
Disclosed is a chemical-mechanical polishing liquid, comprising silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant and a sulfonate anionic surfactant. By using the polishing liquid disclosed in the present invention, the removal rate of copper can be improved while also reducing the removal rate of tantalum, and the phenomena of dish-shaped recessions and dielectric layer corrosion occurring on polished copper wires are improved.
Inventors:
YANG JUNYA (CN)
JIN JIANFEN (CN)
SONG KAI (CN)
MA JIAN (CN)
WANG GUOHAO (CN)
CAI XINYUAN (CN)
LI HENG (CN)
HUANG YUEYUE (CN)
ZHOU WENTING (CN)
JIN JIANFEN (CN)
SONG KAI (CN)
MA JIAN (CN)
WANG GUOHAO (CN)
CAI XINYUAN (CN)
LI HENG (CN)
HUANG YUEYUE (CN)
ZHOU WENTING (CN)
Application Number:
PCT/CN2018/124051
Publication Date:
July 04, 2019
Filing Date:
December 26, 2018
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI CO LTD (CN)
International Classes:
C09G1/02; C23F3/04; H01L21/304
Foreign References:
| CN108250978A | 2018-07-06 | |||
| CN101928520A | 2010-12-29 | |||
| CN103894918A | 2014-07-02 | |||
| CN101117548A | 2008-02-06 | |||
| CN101671527A | 2010-03-17 | |||
| CN102181232A | 2011-09-14 | |||
| CN103509468A | 2014-01-15 | |||
| CN105802509A | 2016-07-27 | |||
| CN1824462A | 2006-08-30 | |||
| CN101240146A | 2008-08-13 | |||
| CN106085245A | 2016-11-09 |
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
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