Title:
CHEMICAL MECHANICAL POLISHING METHOD FOR TUNGSTEN
Document Type and Number:
WIPO Patent Application WO/2018/058397
Kind Code:
A1
Abstract:
A process for chemical-mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, guar gum, a dicarboxylic acid, a source of iron ions, a colloidal silica abrasive and optionally a pH adjusting agent; providing a chemical mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate to remove at least some of the tungsten. The process can reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics.
Inventors:
HO LIN-CHEN (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
Application Number:
PCT/CN2016/100710
Publication Date:
April 05, 2018
Filing Date:
September 29, 2016
Export Citation:
Assignee:
ROHM & HAAS ELECT MATERIALS CMP HOLDINGS INC (US)
HO LIN CHEN (CN)
TSAI WEI WEN (CN)
LEE CHENG PING (CN)
HO LIN CHEN (CN)
TSAI WEI WEN (CN)
LEE CHENG PING (CN)
International Classes:
C09G1/02; C09K3/14; H01L21/304
Foreign References:
| CN1622985A | 2005-06-01 | |||
| CN1715310A | 2006-01-04 | |||
| CN1854234A | 2006-11-01 | |||
| CN101356628A | 2009-01-28 | |||
| EP2357059A2 | 2011-08-17 | |||
| JP2000212776A | 2000-08-02 | |||
| US20110070735A1 | 2011-03-24 |
Attorney, Agent or Firm:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC (CN)
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