CHEMICAL MECHANICAL POLISHING SLURRY AND APPLICATION THEREOF

WIPO Patent Application WO/2017/114309

A1

Disclosed in the present invention are a chemical mechanical polishing slurry and an application thereof, the polishing slurry comprising: (a) grinding particles, (b) aminosilane coupling agent, (c) azole compound, (d) complexing agent, (e) organic phosphoric acid, (f) oxidizing agent, and (g) water. The chemical mechanical polishing slurry of the present invention is used for polishing through-silicon vias (TSV) and IC blocking layers, and is capable of meeting the requirements with respect to polishing rates and selection ratio for various materials. The polishing slurry has a strong correcting ability for a surface of a silicon wafer device, can achieve rapid planarization, and prevent local and overall corrosion that occurs in the metal polishing process, thus improving work efficiency and reducing production cost.

WO/2015/019849	SLURRY FOR CMP
WO/2006/047088	METHODS AND COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SUBSTRATES
JP3692067	POLISHING SLURRY FOR COPPER CMP AND MANUFACTURING METHOD FOR SEMICONDUCTOR APPARATUS USING THE SAME

YAO YING (CN)
JING JIANFEN (CN)
CAI XINYUAN (CN)
QIU TENGFEI (CN)
YANG JUNYA (CN)

PCT/CN2016/111722

July 06, 2017

December 23, 2016

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ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD (CN)

C09G1/02

CN104334674A	2015-02-04
CN104263248A	2015-01-07
CN101802116A	2010-08-11
CN104428386A	2015-03-18
CN104371549A	2015-02-25

BEIJING DACHENG LAW OFFICES, LLP (CN)

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