Title:
CHEMICAL-MECHANICAL POLISHING SOLUTION HAVING HIGH SILICON NITRIDE SELECTIVITY
Document Type and Number:
WIPO Patent Application WO/2018/099109
Kind Code:
A1
Abstract:
A chemical-mechanical polishing solution having high silicon nitride selectivity, comprising abrasive particles and a compound containing one or more carboxyl groups. The polishing solution has a high SiN polishing rate, a low Teos polishing rate, and a high SiN/Teos polishing rate selectivity ratio. The polishing solution can greatly reduce the defects in an oxide line on the surface of a substrate and has an excellent market application prospect.
More Like This:
| WO/2005/010966 | METHOD FOR POLISHING WAFER |
| WO/2000/053691 | WORKING LIQUIDS AND METHODS FOR MODIFYING STRUCTURED WAFERS SUITED FOR SEMICONDUCTOR FABRICATION |
| WO/2016/019211 | POLISHING SOLUTIONS AND METHODS OF USING SAME |
Inventors:
ZHOU WENTING (CN)
JING JIANFEN (CN)
JING JIANFEN (CN)
Application Number:
PCT/CN2017/094349
Publication Date:
June 07, 2018
Filing Date:
July 25, 2017
Export Citation:
Assignee:
ANJI MICROELECTRONICS TECH SHANGHAI CO LTD (CN)
International Classes:
C09G1/02
Foreign References:
| CN101065458A | 2007-10-31 | |||
| CN102046743A | 2011-05-04 | |||
| CN101407699A | 2009-04-15 | |||
| CN103387796A | 2013-11-13 | |||
| CN101665662A | 2010-03-10 |
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
Download PDF: