Title:
CHEMICAL SOLUTION AND SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/054296
Kind Code:
A1
Abstract:
The present invention provides a chemical solution having excellent storage stability and defect inhibition capability. The present invention also provides a method for processing a substrate. The chemical solution according to the present invention is used for removing transition metal-containing matter on a substrate, and contains at least one halogen oxoacid selected from the group consisting of halogen oxoacids and salts thereof, and at least one specific anion selected from the group consisting of SO4
2-, NO3
-, PO4
3-, and BO3
3-, wherein in the case where the chemical solution contains a single specific anion, the contained amount of the single specific anion is 5 ppb by mass to 1 mass% with respect to the total mass of the chemical solution, and in the case where the chemical solution contains two or more specific anions, the contained amount of each of the two or more specific anions is 1 mass% or less with respect to the total mass of the chemical solution, and the contained amount of at least one of the two or more specific anions is 5 ppb by mass or more with respect to the total mass of the chemical solution.
Inventors:
SUGIMURA NOBUAKI (JP)
TAKAHASHI TOMONORI (JP)
SEKI HIROYUKI (JP)
TAKAHASHI TOMONORI (JP)
SEKI HIROYUKI (JP)
Application Number:
PCT/JP2019/031696
Publication Date:
March 19, 2020
Filing Date:
August 09, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; H01L21/306
Domestic Patent References:
| WO2017126554A1 | 2017-07-27 | |||
| WO2016068182A1 | 2016-05-06 |
Foreign References:
| JP2016092101A | 2016-05-23 | |||
| JP2018032781A | 2018-03-01 | |||
| JP2009231354A | 2009-10-08 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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