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Title:
CHEMICAL VAPOR DEPOSITION MATERIAL FORMED OF RUTHENIUM COMPLEX, METHOD FOR PRODUCING SAME AND CHEMICAL VAPOR DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2014/030609
Kind Code:
A1
Abstract:
The present invention is a chemical vapor deposition material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, said chemical vapor deposition material being formed of a ruthenium complex which is represented by the formula described below and in which a carbonyl group and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a chemical vapor deposition material which is formed of a ruthenium complex that is produced at low cost and has a suitable decomposition temperature. (nR-L)Ru(CO)3 (In the formula, L represents a polyene having 4-8 carbon atoms and 2-4 double bonds; the polyene L has an n-number (n ≥ 1) of substituent R; and each substituent R represents a fluoroalkyl group having 1-6 carbon atoms and 1-13 fluorine atoms. In cases where the polyene L has two or more substituents R (n ≥ 2), the substituents R may have different numbers of carbon atoms and different numbers of fluorine atoms in each molecule.)

Inventors:
HARADA, Ryosuke (Tsukuba Technical Center 22 Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
NAKATA, Naoki (Tsukuba Technical Center 22 Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
SAITO, Masayuki (Tsukuba Technical Center 22 Wadai, Tsukuba-sh, Ibaraki 47, 〒3004247, JP)
Application Number:
JP2013/072080
Publication Date:
February 27, 2014
Filing Date:
August 19, 2013
Export Citation:
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Assignee:
TANAKA KIKINZOKU KOGYO K.K. (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 22, 〒1006422, JP)
International Classes:
C23C16/16; C07C17/00; C07C21/19; C07C23/10; C07C23/16; C07F15/00
Domestic Patent References:
WO2004050947A12004-06-17
Foreign References:
JP2010504424A2010-02-12
JP2002523634A2002-07-30
JP2010173979A2010-08-12
JP2006057112A2006-03-02
Other References:
YI-HWA SONG ET AL.: "Deposition of conductive Ru and RU02 thin films employing a pyrazolate complex [Ru(CO)3(3,5-(CF3)2-pz)]2 as the CVD source reagent", CHEMICAL VAPOR DEPOSITION, vol. 9, no. 3, 2003, pages 162 - 169, XP008067172
YOSHIHIDE SENZAKI ET AL.: "Chemical vapor deposition of ruthenium and osmium thin films using (hexafluoro-2-butyne) tetracarbonylruthenium and -osmium", CHEMISTRY OF MATERIALS, vol. 5, no. 12, 1993, pages 1715 - 1721, XP055184338
See also references of EP 2886679A4
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (Hongo K&K Bldg, 30-10 Hongo 3-chome, Bunkyo-k, Tokyo 33, 〒1130033, JP)
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