Title:
CHEMICAL VAPOR DEPOSITION STARTING MATERIAL COMPRISING HETEROGENEOUS POLYNUCLEAR COMPLEX, AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID CHEMICAL VAPOR DEPOSITION STARTING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2016/181918
Kind Code:
A1
Abstract:
The present invention relates to a chemical vapor deposition starting material represented below that comprises a heterogeneous polynuclear complex in which cyclopentadienyl and a carbonyl are coordinated to a first transition metal and second transition metal which are central metals. The first transition metal (M1) and second transition metal (M2) are different from each other. There are 1-2 cyclopentadienyls (L), inclusive, to which substituent groups R1-R5, which are each either hydrogen atoms or C1-5 alkyl groups, are coordinated. The chemical vapor deposition starting material of the present invention makes it possible, using a single starting material, to form a composite metal thin film or composite metal compound thin film including a plurality of metals.
Inventors:
HARADA RYOSUKE (JP)
SHIGETOMI TOSHIYUKI (JP)
NABEYA SHUNICHI (JP)
SUZUKI KAZUHARU (JP)
KUMAKURA AKIKO (JP)
AOYAMA TATSUTAKA (JP)
SONE TAKAYUKI (JP)
SHIGETOMI TOSHIYUKI (JP)
NABEYA SHUNICHI (JP)
SUZUKI KAZUHARU (JP)
KUMAKURA AKIKO (JP)
AOYAMA TATSUTAKA (JP)
SONE TAKAYUKI (JP)
Application Number:
PCT/JP2016/063695
Publication Date:
November 17, 2016
Filing Date:
May 09, 2016
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C16/06; C07F13/00; C07F15/00; C07F15/02; C07F15/06; C07F17/00; C07F19/00; C23C16/18
Foreign References:
| US5171610A | 1992-12-15 |
Other References:
LIU DAVID K.: "Photochemical vapor deposition of mixed-metal thin films from organometallic precursors containing heteronuclear metal-metal bonds", MATERIALS LETTERS, vol. 10, no. 7 - 8, January 1991 (1991-01-01), pages 318 - 322, XP024151250
SHYU SHIN-GUANG: "Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single- source precursor", CHEMICAL COMMUNICATIONS, 1996, pages 2239 - 2240, XP055329163
See also references of EP 3296424A4
SHYU SHIN-GUANG: "Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single- source precursor", CHEMICAL COMMUNICATIONS, 1996, pages 2239 - 2240, XP055329163
See also references of EP 3296424A4
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
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