Title:
CHEMICAL VAPOR DEPOSITION STARTING MATERIAL CONTAINING ORGANIC RUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD FOR RUTHENIUM THIN FILM OR RUTHENIUM COMPOUND THIN FILM
Document Type and Number:
WIPO Patent Application WO/2022/190844
Kind Code:
A1
Abstract:
The present invention is a chemical vapor deposition starting material for producing a ruthenium thin film or a ruthenium compound thin film by chemical vapor deposition, said chemical vapor deposition starting material being characterized by containing an organic ruthenium compound represented by chemical formula 1 and the same β-diketone as a ligand of the organic ruthenium compound. The chemical vapor deposition starting material minimizes discoloration and precipitation even when heated at high temperatures and makes it possible to form a stable ruthenium thin film or ruthenium compound thin film. In the formula, R1 and R2 are substituents and each represent hydrogen or a straight-chain or branched alkyl group.
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Inventors:
SUZUKI KAZUHARU (JP)
MORI YUKI (JP)
DAS SUBHABRATA (JP)
NAKAGAWA HIROFUMI (JP)
NABEYA SHUNICHI (JP)
MORI YUKI (JP)
DAS SUBHABRATA (JP)
NAKAGAWA HIROFUMI (JP)
NABEYA SHUNICHI (JP)
Application Number:
PCT/JP2022/007082
Publication Date:
September 15, 2022
Filing Date:
February 22, 2022
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C16/18; C07C49/12; C07F15/00; H01L21/285
Foreign References:
| JP2014185353A | 2014-10-02 | |||
| JP2013199673A | 2013-10-03 | |||
| JP2012006858A | 2012-01-12 | |||
| JP2003306472A | 2003-10-28 |
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
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