Title:
CHEMICALLY AMPLIFIED RESIST MATERIAL AND PATTERN-FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/116577
Kind Code:
A1
Abstract:
On a substrate (101), a resist film (102) is formed from a chemically amplified resist material which contains a polymer that has an acid-cleavable group and a group obtained by substituting the hydrogen atom in the OH group of phenol with lactone. After that, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light. Then, the pattern-exposed resist film (102) is heated and the heated resist film (102) is developed, thereby forming a resist pattern (102a) from the resist film (102).
Inventors:
ENDOU MASAYUKI
SASAGO MASARU
SASAGO MASARU
Application Number:
PCT/JP2010/000191
Publication Date:
October 14, 2010
Filing Date:
January 15, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
ENDOU MASAYUKI
SASAGO MASARU
ENDOU MASAYUKI
SASAGO MASARU
International Classes:
C08F8/00; G03F7/039; C08F212/04; C08F220/10; G03F7/26; H01L21/027
Foreign References:
| JP2006301609A | 2006-11-02 | |||
| JP2007010748A | 2007-01-18 | |||
| JP2007192907A | 2007-08-02 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
Download PDF: