Title:
CHEMICO-MECHANICAL POLISHING SOLUTION AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/135168
Kind Code:
A1
Abstract:
Disclosed is a chemico-mechanical polishing solution, comprising silica abrasion particles, a nitrogen-containing heterocyclic compound comprising one or more carboxyl groups, and an ethoxylated butoxylated alkyl alcohol. Also disclosed is a use of the chemico-mechanical polishing solution in the polishing of silica, polysilicon, and silicon nitride. The polishing solution of the present invention has a polishing rate for silicon nitride that is far higher than that for silica and polysilicon, and thus finds good use in the chemico-mechanical polishing of a silica/polysilicon stop layer, permitting a good control of the amount of removal of oxides and polysilicon on a substrate surface during the polishing process.
Inventors:
ZHOU WENTING (CN)
JING JIANFEN (CN)
YAO YING (CN)
CAI XINYUAN (CN)
MA JIAN (CN)
LI HENG (CN)
JING JIANFEN (CN)
YAO YING (CN)
CAI XINYUAN (CN)
MA JIAN (CN)
LI HENG (CN)
Application Number:
PCT/CN2019/126141
Publication Date:
July 02, 2020
Filing Date:
December 18, 2019
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI CO LTD (CN)
International Classes:
C23F3/06; C09G1/02
Foreign References:
| CN101469252A | 2009-07-01 | |||
| CN101747843A | 2010-06-23 | |||
| CN107523219A | 2017-12-29 | |||
| TW201829717A | 2018-08-16 |
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
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