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Title:
ON-CHIP INTEGRATED SEMICONDUCTOR LASER STRUCTURE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/151290
Kind Code:
A1
Abstract:
An on-chip integrated semiconductor laser structure and a manufacturing method thereof. The structure comprises: an epitaxial structure consisting of the following components sequentially deposited at a substrate (1): a first n-contact layer (2), a first n-confinement layer (3), a first active region (4), a first p-confinement layer (5), a first p-contact layer (6), an isolation layer (7), a second n-contact layer (8), a second n-confinement layer (9), a second active region (10), a second p-confinement layer (11) and a second p-contact layer (12); a waveguide structure comprising a waveguide structure (14) of a first laser and a waveguide structure (13) of a second laser; gratings (15, 16) provided at two sides of the waveguide structure (14) of the first laser and the waveguide structure (13) of the second laser to realize laser mode selection; and current injection windows (17, 18, 19, 20). In the invention, epitaxial materials of semiconductor lasers having different wavebands are grown at the same epitaxial layer, thereby realizing on-chip integration of lasers having different wavelengths, and emission of laser light having different wavelengths from the same laser device.

Inventors:
YANG CHENGAO (CN)
NIU ZHICHUAN (CN)
ZHANG YU (CN)
XU YINGQIANG (CN)
XIE SHENGWEN (CN)
ZHANG YI (CN)
SHANG JINMING (CN)
Application Number:
PCT/CN2019/114740
Publication Date:
July 30, 2020
Filing Date:
October 31, 2019
Export Citation:
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Assignee:
INST SEMICONDUCTORS CAS (CN)
International Classes:
H01S5/02; H01S5/20
Foreign References:
CN109586159A2019-04-05
CN108832483A2018-11-16
CN104917052A2015-09-16
CN106953235A2017-07-14
US5333141A1994-07-26
US6144683A2000-11-07
US5436193A1995-07-25
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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