Title:
ON-CHIP INTEGRATED SEMICONDUCTOR LASER STRUCTURE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/151290
Kind Code:
A1
Abstract:
An on-chip integrated semiconductor laser structure and a manufacturing method thereof. The structure comprises: an epitaxial structure consisting of the following components sequentially deposited at a substrate (1): a first n-contact layer (2), a first n-confinement layer (3), a first active region (4), a first p-confinement layer (5), a first p-contact layer (6), an isolation layer (7), a second n-contact layer (8), a second n-confinement layer (9), a second active region (10), a second p-confinement layer (11) and a second p-contact layer (12); a waveguide structure comprising a waveguide structure (14) of a first laser and a waveguide structure (13) of a second laser; gratings (15, 16) provided at two sides of the waveguide structure (14) of the first laser and the waveguide structure (13) of the second laser to realize laser mode selection; and current injection windows (17, 18, 19, 20). In the invention, epitaxial materials of semiconductor lasers having different wavebands are grown at the same epitaxial layer, thereby realizing on-chip integration of lasers having different wavelengths, and emission of laser light having different wavelengths from the same laser device.
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Inventors:
YANG CHENGAO (CN)
NIU ZHICHUAN (CN)
ZHANG YU (CN)
XU YINGQIANG (CN)
XIE SHENGWEN (CN)
ZHANG YI (CN)
SHANG JINMING (CN)
NIU ZHICHUAN (CN)
ZHANG YU (CN)
XU YINGQIANG (CN)
XIE SHENGWEN (CN)
ZHANG YI (CN)
SHANG JINMING (CN)
Application Number:
PCT/CN2019/114740
Publication Date:
July 30, 2020
Filing Date:
October 31, 2019
Export Citation:
Assignee:
INST SEMICONDUCTORS CAS (CN)
International Classes:
H01S5/02; H01S5/20
Foreign References:
CN109586159A | 2019-04-05 | |||
CN108832483A | 2018-11-16 | |||
CN104917052A | 2015-09-16 | |||
CN106953235A | 2017-07-14 | |||
US5333141A | 1994-07-26 | |||
US6144683A | 2000-11-07 | |||
US5436193A | 1995-07-25 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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