Title:
CHIP AND MANUFACTURING METHOD THEREFOR, RECEIVING CHIP, RANGING DEVICE, AND MOVABLE PLATFORM
Document Type and Number:
WIPO Patent Application WO/2022/061817
Kind Code:
A1
Abstract:
A backside-illuminated avalanche photodiode chip and a manufacturing method therefor, a receiving chip, a ranging device, and a movable platform. The manufacturing method comprises: providing a heavily doped substrate which comprises a first surface and a second surface arranged opposite to each other, and forming an epitaxial layer on the first surface (S1); forming a backside-illuminated avalanche photodiode array in the epitaxial layer (S2); forming a through-silicon via which penetrates the epitaxial layer, is partially embedded into the substrate and has a vertical sidewall (S3); forming a wiring layer on the through-silicon via (S4); and thinning the substrate such that the through-silicon via is exposed on the second surface (S5). The backside-illuminated avalanche photodiode chip is a highly-integrated and arrayed receiving chip, or an area-arrayed APD chip, and has more stable performance and exceptional reliability.
Inventors:
LUO FEIYU (CN)
MA LIANGLIANG (CN)
ZHENG GUOGUANG (CN)
HUANG XIAO (CN)
HONG XIAOPING (CN)
MA LIANGLIANG (CN)
ZHENG GUOGUANG (CN)
HUANG XIAO (CN)
HONG XIAOPING (CN)
Application Number:
PCT/CN2020/118146
Publication Date:
March 31, 2022
Filing Date:
September 27, 2020
Export Citation:
Assignee:
SZ DJI TECHNOLOGY CO LTD (CN)
International Classes:
H01L31/107; H01L31/18
Foreign References:
| CN107305840A | 2017-10-31 | |||
| CN110416335A | 2019-11-05 | |||
| CN106338725A | 2017-01-18 | |||
| CN104637870A | 2015-05-20 | |||
| CN104795354A | 2015-07-22 | |||
| CN102403270A | 2012-04-04 | |||
| US20130228936A1 | 2013-09-05 | |||
| US20090261441A1 | 2009-10-22 | |||
| JP2000252507A | 2000-09-14 |
Attorney, Agent or Firm:
P.C. & ASSOCIATES (CN)
Download PDF: