ON-CHIP MICRO ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF

Title:

ON-CHIP MICRO ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2020/098555

Kind Code:

A1

Abstract:

Provided are an on-chip micro electron source and manufacturing method thereof. The on-chip micro electron source is provided with a heat conductive layer (10), and at least one electrode (122) in the same pair of electrodes is connected with the heat conductive layer (10) via a through hole (111) of an insulating layer, such that the heat generated by the on-chip micro electron source can be dissipated through the electrode (122) and the heat conductive layer (10), thereby significantly improving the heat dissipation ability of the on-chip electron source. Therefore, the on-chip micro electron source is capable of integrating multiple single electron sources on the same substrate to form an electron source integration array with a high integration level, enabling the on-chip electron source to have high overall emission current, further meeting more application requirements. The on-chip micro electron source can be widely applied to various electronic devices involving electron sources, for example, X-ray tubes, microwave tubes, flat-panel displays and the like.

Inventors:

WEI XIANLONG (CN)
YANG WEI (CN)

Application Number:

PCT/CN2019/116135

Publication Date:

May 22, 2020

Filing Date:

November 07, 2019

Export Citation:

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Assignee:

UNIV BEIJING (CN)

International Classes:

H01J3/02; H01J9/00

Foreign References:

CN109285740A	2019-01-29
CN209056458U	2019-07-02
CN107248489A	2017-10-13
CN1913076A	2007-02-14
US20090237570A1	2009-09-24
CN201811340399A	2018-11-12
CN201821854867U	2018-11-12

Other References: