Title:
CIGS SOLAR CELL AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/060425
Kind Code:
A1
Abstract:
The present application provides a CIGS solar cell and a preparation method therefor. The CIGS solar cell comprises a soda-lime glass substrate, a Mo back electrode, a CIGS absorption layer, a CdS buffer layer, an i-ZnO and AZO window layer, and an Ni-Al-Ni gate electrode which are stacked in sequence. The present application solves the problems of low photoelectric conversion efficiency of batteries and the like caused by poor crystallization performance of CIGS films, small crystal grains, and increased photon-generated carrier recombination probability which are caused by low temperature of the substrate, and thus achieves low-temperature deposition of the CIGS solar cell. Moreover, the photoelectric performance and battery performance of the CIGS solar cell are prevented from being greatly affected during low-temperature growth, and compatibility with a flexible substrate (PI) process that is not resistant to high temperature is achieved, so that the device manufacturing difficulty can be simplified in actual production, the heating energy consumption of the substrate is reduced, the softening deformation of glass is effectively avoided, the problem of large-area glass deformation in industrial production is solved, and the wide industrial application of CIGS battery technology can be accelerated and promoted. Therefore, the present application has wide prospects for market application.
Inventors:
YUAN XINYE (CN)
LI WEIMIN (CN)
YU SHEN (CN)
TANG WEI (CN)
WANG SAIQIANG (CN)
LI SONG (CN)
ZHAO CHENCHEN (CN)
QI TONGQING (CN)
MA MING (CN)
NING DE (CN)
YANG CHUNLEI (CN)
LI WEIMIN (CN)
YU SHEN (CN)
TANG WEI (CN)
WANG SAIQIANG (CN)
LI SONG (CN)
ZHAO CHENCHEN (CN)
QI TONGQING (CN)
MA MING (CN)
NING DE (CN)
YANG CHUNLEI (CN)
Application Number:
PCT/CN2022/138220
Publication Date:
March 28, 2024
Filing Date:
December 09, 2022
Export Citation:
Assignee:
SHENZHEN INST ADV TECH (CN)
International Classes:
H01L31/032; C23C14/06; H01L21/02; H01L31/0445; H01L31/0749; H01L31/18
Domestic Patent References:
| WO2012064000A1 | 2012-05-18 |
Foreign References:
| CN109560144A | 2019-04-02 | |||
| CN112736150A | 2021-04-30 | |||
| CN102983219A | 2013-03-20 | |||
| CN110416367A | 2019-11-05 | |||
| CN113571594A | 2021-10-29 | |||
| CN112259639A | 2021-01-22 | |||
| KR100743923B1 | 2007-07-30 |
Attorney, Agent or Firm:
BEIJING ZHONG XUN TONG DA INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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