Title:
CIRCUIT SIMULATION METHOD, CIRCUIT SIMULATION DEVICE AND CIRCUIT SIMULATION PROGRAM
Document Type and Number:
WIPO Patent Application WO/2007/007371
Kind Code:
A1
Abstract:
A simulation method, a simulation program and a simulation device for accurately reproducing
an operation of a semiconductor circuit wherein a ferroelectric capacitor is
used, without being influenced by a ferroelectric material of the ferroelectric
capacitor. In the circuit simulation method, the ferroelectric thin film capacitor
is expressed by connecting in parallel a plurality of capacitor elements composed
of serial connection of a resistor and a capacitor, and a polarization reversal
response is reproduced by using saturation polarization, coercive voltage
and resistance of the capacitor element as parameters. The method is characterized
in that the current value is set as a function of a voltage (VR) applied
on both ends of the resistance and a polarization value (P) of the capacitor, and
the operation of a circuit including the ferroelectric thin film capacitor is
reproduced.
Inventors:
TAMURA TETSURO (JP)
Application Number:
PCT/JP2005/012567
Publication Date:
January 18, 2007
Filing Date:
July 07, 2005
Export Citation:
Assignee:
FUJITSU LTD (JP)
TAMURA TETSURO (JP)
TAMURA TETSURO (JP)
International Classes:
G06F17/50; G11C11/22
Foreign References:
| JP2002329840A | 2002-11-15 |
Attorney, Agent or Firm:
OKUYAMA, Yuki (5-21-12 Sendagay, Shibuya-ku Tokyo 51, JP)
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