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Title:
CLEANER COMPOSITIONS CONTAINING FREE RADICAL QUENCHERS
Document Type and Number:
WIPO Patent Application WO2005066325
Kind Code:
A3
Abstract:
The invention relates to a method of cleaning the surface of a substrate to remove post-etch residue or post chemical mechanical polishing residues from the surface of a substrate. Specifically, the present invention relates to a method of post-CMP or post-etch cleaning. The method involves contacting the surface of a substrate with a CMP composition or an etching composition, that contains free radicals, and subsequently contacting the surface of the substrate with a composition that comprises a free radical quencher.

Inventors:
SMALL ROBERT J (US)
HAYDEN CHRISTOPHER G (US)
Application Number:
PCT/US2004/043307
Publication Date:
March 30, 2006
Filing Date:
December 23, 2004
Export Citation:
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Assignee:
EKC TECHNOLOGY INC (US)
SMALL ROBERT J (US)
HAYDEN CHRISTOPHER G (US)
International Classes:
C11D11/00; C09G1/02; C11D3/00; C11D3/02; C11D3/12; C11D3/20; C11D3/34; C11D3/39; C11D7/00; C11D7/02; C11D7/08; C11D7/20; C11D7/26; C11D7/34; H01L21/02; H01L21/306; H01L21/3213
Domestic Patent References:
WO2001095381A22001-12-13
WO1999060448A11999-11-25
WO2001040425A22001-06-07
Foreign References:
US20010004633A12001-06-21
US20030073601A12003-04-17
US6242351B12001-06-05
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