CLEANING COMPOSITION FOR REMOVING THICK FILM RESIST

Title:

CLEANING COMPOSITION FOR REMOVING THICK FILM RESIST

Document Type and Number:

WIPO Patent Application WO/2008/125002

Kind Code:

A1

Abstract:

A cleaning composition for removing thick film resist includes dimethylsulfoxide, potassium hydroxide, benzyl alcohol and/or derivatives thereof, quaternary ammonium hydroxide, alkanolamine. The cleaning composition may clean more than 100μm thickness resist on a metal, metal alloy and dielectric substrate.

Inventors:

SHI ROBERT YONGTAO (CN)
PENG LIBBERT HONGXIU (CN)
LIU BING (CN)

Application Number:

PCT/CN2008/000681

Publication Date:

October 23, 2008

Filing Date:

April 03, 2008

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Assignee:

ANJI MICROELECTRONICS SHANGHAI (CN)
SHI ROBERT YONGTAO (CN)
PENG LIBBERT HONGXIU (CN)
LIU BING (CN)

International Classes:

G03F7/42; H01L21/02; C11D1/83; C23G1/06

Foreign References:

US20030181344A1	2003-09-25
US20050197265A1	2005-09-08
US20050119143A1	2005-06-02

Attorney, Agent or Firm:

ZHENGHAN LAW FIRM (South Tower of Shanghai Stock Exchange BuildingNo. 528 Pu Dong Road, Shanghai 0, CN)

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