Title:
CLEANING LIQUID, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/099211
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing: a cleaning liquid used on a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid having excellent prevention of corrosion of a cleaning object while also having excellent residue removal performance; a method for cleaning a substrate using the cleaning liquid; and a method for manufacturing a semiconductor device. This cleaning liquid is a cleaning liquid for a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid including water and at least one species selected from a hydroxylamine and a hydroxylamine salt. In the formulas, x and y are numbers represented by x = 1-3 and y = 1-2, respectively.
Inventors:
TAKAHASHI TOMONORI (JP)
TAKAHASHI SATOMI (JP)
SHIMIZU TETSUYA (JP)
YOSHII AKIKO (JP)
MURO NAOTSUGU (JP)
TAKAHASHI SATOMI (JP)
SHIMIZU TETSUYA (JP)
YOSHII AKIKO (JP)
MURO NAOTSUGU (JP)
Application Number:
PCT/JP2016/086675
Publication Date:
June 15, 2017
Filing Date:
December 09, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; C11D7/32; C11D17/08
Foreign References:
| JP2012195590A | 2012-10-11 | |||
| JP2001261312A | 2001-09-26 | |||
| JP2009217267A | 2009-09-24 | |||
| JP2006501327A | 2006-01-12 | |||
| JP2001267282A | 2001-09-28 | |||
| JP2006269677A | 2006-10-05 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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