Title:
CLEANING METHOD AND ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2002/050883
Kind Code:
A1
Abstract:
A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF¿2? gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H¿2?O reacts with XeF¿2?, so that HF is produced. Therefore, for example, the natural oxide film SiO¿2? formed on the silicon pieces can be removed, and XeF¿2? can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.
Inventors:
KANAYAMA TOKIKO (JP)
KOUNO HIROAKI (JP)
KOUNO HIROAKI (JP)
Application Number:
PCT/JP2000/008974
Publication Date:
June 27, 2002
Filing Date:
December 18, 2000
Export Citation:
Assignee:
SUMITOMO PRECISION PROD CO (JP)
KANAYAMA TOKIKO (JP)
KOUNO HIROAKI (JP)
KANAYAMA TOKIKO (JP)
KOUNO HIROAKI (JP)
International Classes:
B01D11/04; B08B5/00; C03C23/00; C10G21/18; C23F1/00; C23G1/00; G01L21/30; G01R31/00; H01L21/02; H01L21/304; H01L21/306; H01L21/3065; (IPC1-7): H01L21/304; H01L21/3065
Foreign References:
| JPH07122539A | 1995-05-12 | |||
| JPH0496222A | 1992-03-27 |
Attorney, Agent or Firm:
Ikejyo, Shigenobu (Fushimimachi 3-chome Chuou-ku Osaka-shi Osaka, JP)
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